Valley splitting in the antiferromagnetic heterostructure MnPSe3/WSe2,Journal of Materials Chemistry C

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Valley splitting in the antiferromagnetic heterostructure MnPSe3/WSe2
Journal of Materials Chemistry C ( IF 5.7 ) Pub Date : 2021-2-3 , DOI: 10.1039/d0tc03065a
Bing-Jie Wang _{1,

2,

3,

4,

5} , Yu-Yun Sun _{1,

2,

3,

4,

5} , Ju Chen _{1,

2,

3,

4,

5} , Weiwei Ju _{5,

6,

7,

8} , Yi-Peng An _{5,

9,

10,

11} , Shi-Jing Gong _{1,

2,

3,

4,

5}

Affiliation

The spin degeneracy in antiferromagnets hinders the spin splitting valleys, which limits their application in spintronic and valleytronic devices. In the two dimensional (2D) antiferromagnetic (AFM) heterostructure MnPSe₃/WSe₂, the coexistence of spin–orbit, spin–valley, and interlayer coupling produces the spin splitting valence band maximum (VBM) from the nonmagnetic semiconductor WSe₂ and the spin splitting conduction band minimum (CBM) from the antiferromagnet MnPSe₃, which results in a sizable spin- and k-resolved valley splitting larger than 30 meV. In addition, normal strain proves to be an effective approach to regulate valley splitting through interlayer coupling.

中文翻译：

反铁磁异质结构MnPSe3 / WSe2中的谷裂

反铁磁体中的自旋简并性阻碍了自旋分裂谷，这限制了它们在自旋电子器件和谷电子器件中的应用。在二维（2D）反铁磁（AFM）异质结构MnPSe ₃ / WSe _2中，自旋轨道，自旋谷和层间耦合的共存产生了非磁性半导体WSe ₂和自旋分裂价带的最大值（VBM）。来自反铁磁体MnPSe _3的自旋分裂导带最小值（CBM），这导致自旋和k分辨的谷值分裂大于30 meV。此外，正应变被证明是通过层间耦合调节谷裂的有效方法。

更新日期：2021-02-19

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