Nontoxic metal-halide perovskite materials have triggered a revolution of emitting devices as well as solar cells. In this work, we demonstrate a lead-free γ-CsSnI₃ perovskite random lasing operated at room temperature in ambient air. The high-purity γ-CsSnI₃ films with the orthorhombic structure were grown by chemical vapor deposition (CVD). From the absorption and photoluminescence (PL) spectra, the intense PL emission at 950 nm is consistent with the γ-CsSnI₃ band-edge absorption. Moreover, the PL stability test shows the prolonged stability of CVD-grown films. With increasing excitation energy above 18 mJ/cm², the random laser with a high Q-factor (∼3000) is achieved.

中文翻译：

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CVD处理制备的锡基钙钛矿室温近红外随机激光

无毒的金属卤化物钙钛矿材料引发了发射装置以及太阳能电池的革命。在这项工作中，我们展示了无铅γ-CsSnI ₃钙钛矿随机在环境空气中室温下操作激光。的高纯度γ-CsSnI _3层膜与斜方晶结构是由化学气相沉积（CVD）生长。从吸收和光致发光（PL）光谱，在950纳米的强PL发射是与γ-CsSnI一致₃带边缘吸收。此外，PL稳定性测试显示了CVD生长膜的长期稳定性。随着激发能量增加到18 mJ / cm ^2以上，可以获得具有高Q因子（〜3000）的随机激光器。