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Influence of Dynamic Disorder and Charge–Lattice Interactions on Optoelectronic Properties of Halide Perovskites
The Journal of Physical Chemistry C ( IF 3.3 ) Pub Date : 2021-02-16 , DOI: 10.1021/acs.jpcc.0c10889 Kyle T. Munson 1 , John B. Asbury 1, 2
The Journal of Physical Chemistry C ( IF 3.3 ) Pub Date : 2021-02-16 , DOI: 10.1021/acs.jpcc.0c10889 Kyle T. Munson 1 , John B. Asbury 1, 2
Affiliation
The origins of many unique properties of halide perovskite semiconductors can be traced to charge–lattice interactions that lead to large polaron formation combined with their unusual electronic structure of defects. However, the ability to understand and control the interplay of these electronic states with dynamic disorder arising from structural fluctuations of the metal halide framework is needed to guide continued development of new variants of these materials. In this Perspective, we examine the influence that dynamic disorder has on charge–lattice interactions in halide perovskite materials that lead to charge localization and large polaron formation. Furthermore, we describe how the interplay of material composition, structural dynamics, and large polaron formation influences radiative and nonradiative band-edge recombination. Insights about how to control this interplay may inform development of related metal halide semiconductors including 2D Ruddlesden–Popper, double perovskite, and nanocrystalline systems with tailored radiative and charge transport properties while avoiding toxic elements.
中文翻译:
动态无序和电荷-晶格相互作用对钙钛矿卤化物光电性能的影响
卤化物钙钛矿半导体许多独特性质的起源可以追溯到电荷-晶格相互作用,该相互作用导致大极化子的形成以及其异常的电子结构缺陷。但是,需要具有理解和控制这些电子态与由金属卤化物骨架的结构波动引起的动态无序的相互作用的能力,以指导这些材料的新变体的持续开发。在此视角中,我们研究了动态无序对卤化钙钛矿材料中电荷-晶格相互作用的影响,该相互作用导致电荷局部化和大极化子形成。此外,我们描述了材料成分,结构动力学和大极化子形成的相互作用如何影响辐射和非辐射带边复合。
更新日期:2021-03-18
中文翻译:
动态无序和电荷-晶格相互作用对钙钛矿卤化物光电性能的影响
卤化物钙钛矿半导体许多独特性质的起源可以追溯到电荷-晶格相互作用,该相互作用导致大极化子的形成以及其异常的电子结构缺陷。但是,需要具有理解和控制这些电子态与由金属卤化物骨架的结构波动引起的动态无序的相互作用的能力,以指导这些材料的新变体的持续开发。在此视角中,我们研究了动态无序对卤化钙钛矿材料中电荷-晶格相互作用的影响,该相互作用导致电荷局部化和大极化子形成。此外,我们描述了材料成分,结构动力学和大极化子形成的相互作用如何影响辐射和非辐射带边复合。