嵌入2D NbSe <sub>2</sub>材料的原子开关抑制了随机开关行为并改善了突触功能,ACS Applied Materials & Interfaces

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嵌入2D NbSe ₂材料的原子开关抑制了随机开关行为并改善了突触功能
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2021-02-16 , DOI: 10.1021/acsami.0c18784
Yu-Rim Jeon ₁ , Jungmin Choi ₂ , Jung-Dae Kwon ₂ , Min Hyuk Park ₃ , Yonghun Kim ₂ , Changhwan Choi ₁

Affiliation

我们研究了化学气相沉积（CVD）二维（2D）二硒化铌（NbSe ₂）材料的电阻切换和突触特性。研究了三种不同的原子开关器件Ag / HfO ₂ / Pt，Ag / Ti / HfO ₂ / Pt和Ag / NbSe ₂ / HfO ₂ / Pt作为记忆和神经形态器件。插入的Ti和NbSe ₂缓冲层均有效地控制了随机的Ag离子扩散，从而抑制了开关特性的变化，这在原子开关器件中是一个关键问题。特别是带有2D NbSe ₂的设备缓冲层显着增强了设备在耐用性和保持性方面的可靠性。结合控制银离子迁移的扫描透射电子显微镜（STEM）和能量分散光谱（EDS）分析，可以理解，灯丝连接与SET和RESET过程相关。除了具有存储设备中的电阻行为外，还通过具有2D NbSe ₂缓冲层的原子开关演示了各种突触功能，例如依赖于峰率的可塑性（SRDP），遗忘曲线，增强和抑制。此外，使用MNIST 28×28像素数据库对模拟的长期突触特性进行了仿真。使用采用CVD 2D NbSe ₂ 阻挡层，可以很好地控制随机的Ag离子扩散行为，因此可以获得稳定的开关和突触功能。

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Suppressed Stochastic Switching Behavior and Improved Synaptic Functions in an Atomic Switch Embedded with a 2D NbSe2 Material

We investigated chemical vapor-deposited (CVD) two-dimensional (2D) niobium diselenide (NbSe₂) material for the resistive switching and synaptic characteristics. Three different atomic switch devices with Ag/HfO₂/Pt, Ag/Ti/HfO₂/Pt, and Ag/NbSe₂/HfO₂/Pt were studied as both memory and neuromorphic devices. Both the inserted Ti and NbSe₂ buffer layers effectively control the stochastic Ag-ion diffusion, leading to suppressed variation of switching characteristics, which is a critical issue in an atomic switch device. Especially, the device with the 2D NbSe₂ buffer layer strikingly enhanced the device reliability in both endurance and retention. In conjunction with scanning transmission electron microscopy (STEM) and energy-dispersive spectrometry (EDS) analysis of the control of the Ag-ion migration, it was understood that filament connection is interrelated with the SET and RESET processes. Besides resistive behaviors in the memory device, various synapse functions such as spike-rate-dependent plasticity (SRDP), forgetting curve, potentiation, and depression were demonstrated with an atomic switch with the 2D NbSe₂ buffer layer. Furthermore, the emulated long-term synaptic property was simulated using the MNIST 28 × 28 pixel database. Using adopting a CVD 2D NbSe₂ blocking layer, the stochastic Ag-ion diffusion behavior is well-controlled and therefore stable switching and synapse functions are attained.

更新日期：2021-03-03

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