Utilizing the Diffusion of Fluorinated Polymers to Modify the Semiconductor/Dielectric Interface in Solution-Processed Conjugated Polymer Field-Effect Transistors,ACS Applied Materials & Interfaces

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Utilizing the Diffusion of Fluorinated Polymers to Modify the Semiconductor/Dielectric Interface in Solution-Processed Conjugated Polymer Field-Effect Transistors
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2021-02-10 , DOI: 10.1021/acsami.0c23058
Yuhui Yang ₁ , Yongming Hong ₁ , Xinping Wang ₁

Affiliation

It has been demonstrated that tailoring the properties of semiconductor/dielectric interfaces with fluorinated polymers yields better performance for organic field-effect transistors (OFETs). However, it remains a challenge to fabricate bottom-gate OFET devices on fluorinated dielectrics using solution-processed methods due to the poor wettability of fluorinated dielectrics. Here, we utilized the diffusion of fluorinated poly(methyl methacrylate) (PMMA) to construct the fluorine-rich semiconductor/dielectric interface to achieve the fabrication of bottom-gate OFETs with a solution-processed poly(3-hexylthiophene) (P3HT) semiconductor layer. The consequences indicate that the fluorinated dielectrics can effectively decrease the charge traps density at the semiconductor/dielectric interface and promote the edge-on orientation of P3HT on the dielectric surface. Thus, the devices based on fluorinated PMMA modified dielectrics exhibit higher carrier mobility and electrical stability than those of the fluorine-free devices. Our investigation affords a new strategy for the design and interface optimization of devices, which may further advance the performance of OFET devices.

中文翻译：

利用含氟聚合物的扩散来修改溶液处理的共轭聚合物场效应晶体管中的半导体/介电界面

已经证明，使用氟化聚合物来调整半导体/电介质界面的特性可为有机场效应晶体管（OFET）带来更好的性能。然而，由于氟化电介质的差的可润湿性，使用溶液处理的方法在氟化电介质上制造底栅OFET器件仍然是一个挑战。在这里，我们利用氟化聚甲基丙烯酸甲酯（PMMA）的扩散来构建富氟半导体/介电界面，从而实现采用溶液处理的聚（3-己基噻吩）（P3HT）半导体的底栅OFET的制造层。结果表明，氟化电介质可有效降低半导体/电介质界面上的电荷陷阱密度，并促进电介质表面上P3HT的边沿定向。因此，与不含氟的器件相比，基于氟化的PMMA改性电介质的器件表现出更高的载流子迁移率和电稳定性。我们的研究为设备的设计和接口优化提供了新的策略，可以进一步提高OFET设备的性能。

更新日期：2021-02-24

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