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Tunable Electronic and Magnetic Properties in 1T-VSe2 Monolayer on BiFeO3(0001) Ferroelectric Substrate
Applied Surface Science ( IF 6.3 ) Pub Date : 2021-02-07 , DOI: 10.1016/j.apsusc.2021.149206
Jian-Qing Dai , Jin Yuan , Cheng Ke , Zi-Cheng Wei

In present work, we perform first-principles calculations about the interface coupling between ferromagnetic 1T-VSe2 monolayer and ferroelectric BiFeO3(0001) substrate, as well as the influence of ferroelectric polarization reversal on the electronic and magnetic properties in the 1T-VSe2 monolayer. We find that the interfacial charge transfer of 1013 − 1014 e/cm2 order of magnitude in the 1T-VSe2/BiFeO3(0001) heterostructure causes remarkable change in electron occupation of the V 3d orbitals, which leads to very distinct electronic and magnetic properties in the 1T-VSe2 monolayer with respect to its free-standing form. Furthermore, our results predict that the electronic and magnetic properties of the 1T-VSe2 monolayer can be significantly modulated by polarization reversal of the ferroelectric substrate. The large magnetoelectric coupling coefficient accessing 10-10 G⋅cm2/V order of magnitude implies that the 1T-VSe2/BiFeO3(0001) hybrid system is an novel type of composite multiferroics and provides exciting prospects in new frontiers of spintronic devices.



中文翻译:

BiFeO 3(0001)铁电基体上1 T -VSe 2单层中的可调电子和磁性

在当前的工作中,我们对铁磁1 T -VSe 2单层与铁电BiFeO 3(0001)衬底之间的界面耦合进行第一性原理计算,以及铁电极化反转对1 T中电子和磁性的影响-VSe 2单层。我们发现,在1 T -VSe 2 / BiFeO 3(0001)异质结构中10 13 − 10 14 e / cm 2数量级的界面电荷转移会导致V 3 d的电子占据发生显着变化。轨道,就其独立形式而言,在1 T -VSe 2单层中产生非常不同的电子和磁性。此外,我们的结果预测1 T -VSe 2单层的电子和磁性可以通过铁电基板的极化反转来显着调节。大磁电耦合系数访问10 -10 G⋅cm 2大小的/ V顺序意味着1 Ť -VSe 2 /的BiFeO 3(0001)的混合动力系统是一种新颖型复合multiferroics的,并提供在自旋电子新领域激动人心的前景设备。

更新日期:2021-02-07
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