电极应用氮化钛薄膜原子层沉积中的替代表面反应路线,ACS Applied Electronic Materials

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电极应用氮化钛薄膜原子层沉积中的替代表面反应路线
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2021-02-05 , DOI: 10.1021/acsaelm.0c01079
Hyeok Jae Lee ₁ , Jin Ha Hwang ₁ , Ji-Yong Park ₁ , Sang Woon Lee ₁

Affiliation

通过原子层沉积（ALD）生长的氮化钛（TiN）薄膜作为半导体器件应用中的电极材料引起了相当大的关注，例如逻辑晶体管和动态随机存取存储器（DRAM）。TiCl ₄和NH ₃主要用作TiN ALD工艺的Ti前体和氮源。不幸的是，TiN膜的电阻率随着ALD工艺温度的降低而增加。在ALD工艺温度低于400°C时，TiN膜的电阻率尤其显着提高（> 150μΩ·cm），这是因为剩余的Cl杂质（> 3％）来自TiCl ₄前体。因此，需要高于500℃的处理温度以实现TiN膜的低电阻率。在这项研究中，我们提供了一种新颖的ALD方法以通过新颖的ALD表面反应途径降低TiN膜电阻率的首次演示。结果，与传统的TiCl ₄ + NH ₃ ALD工艺相比，在给定的ALD工艺温度（〜<400°C）下获得了更低的电阻率（<130μΩ·cm）。在TiCl ₄脉冲后引入H ₂ S以形成硫化钛，然后通过以下NH ₃将其转化为氮化钛。气体。通过建议的反应途径，与使用常规TiCl ₄ + NH ₃ ALD工艺的TiN薄膜相比，在给定的生长温度下，TiN薄膜的电阻率降低了20％以上。由于在ALD表面反应过程中H ₂ S的作用，TiN膜中的Cl杂质大大减少（〜1％），最终降低了TiN膜的电阻率。TiN膜的电阻率降低可以降低DRAM操作的功耗，从而为高密度集成提供了激进的DRAM电容器缩放比例。

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Alternative Surface Reaction Route in the Atomic Layer Deposition of Titanium Nitride Thin Films for Electrode Applications

Titanium nitride (TiN) thin films grown by atomic layer deposition (ALD) have attracted considerable attention as electrode materials in semiconductor device applications, such as logic transistors and dynamic random access memories (DRAMs). TiCl₄ and NH₃ are mostly used as the Ti precursor and nitrogen source for the TiN ALD process. Unfortunately, the resistivities of TiN films increase with decreasing ALD process temperature. The resistivity of TiN films especially increases substantially (>150 μΩ·cm) at an ALD process temperature lower than 400 °C because of the remaining Cl impurities (>3%) coming from the TiCl₄ precursor. Consequently, a process temperature higher than 500 °C is necessary to achieve a low resistivity of the TiN film. In this study, we provide the first demonstration of a renovative ALD method to decrease the resistivity of TiN films via a novel ALD surface reaction pathway. As a result, a lower resistivity (<130 μΩ·cm) was obtained at the given ALD process temperature (∼<400 °C) compared to that of the conventional TiCl₄ + NH₃ ALD process. H₂S was introduced after the TiCl₄ pulse to form titanium sulfide, which was transformed to titanium nitride by the following NH₃ gas. With the proposed reaction pathway, the resistivity of the TiN film was decreased by >20% at the given growth temperature compared to TiN films with the conventional TiCl₄ + NH₃ ALD process. Owing to the effect of H₂S during the ALD surface reaction, the Cl impurity was reduced substantially (∼1%) in the TiN film, which eventually decreased the resistivity of the TiN film. The resistivity decrease of the TiN film can enable a reduction of power consumption in the DRAM operation, which offers an aggressive scaling of DRAM capacitors for high-density integration.

更新日期：2021-02-23

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