200 nm cadmium stannate (Cd₂SnO₄) transparent conductive layer films with a sheet resistance of 6.35 Ω/sq and resistivity of 1.27נ10⁻⁴ Ωcm are deposited by magnetron sputtering coupling with adjustable target bias voltage followed by 620 C 30 min annealing. The lowest resistivity of Cd₂SnO₄ films reported before was 1.28נ10⁻⁴ Ωcm, achieved with 510 nm Cd₂SnO₄. The average transmission rate of 200 nm sputtering Cd₂SnO₄ films between 400–800 nm is 94%. The deposition rate increase target bias voltage can the and electrical performance of Cd₂SnO₄ films. The surface work function of Cd₂SnO₄ films is also tunable by target bias voltage. The Cd₂SnO₄ phonon spectrum and phonon density of states combined with Raman microscope shows the Cd₂SnO₄ films with most ideal electric properties has a identical phonon response. XPS shows the chemical component of as-deposited Cd₂SnO₄ films and Cd₂SnO₄ films after annealing with 120 V target bias voltage is Cd_2.03SnO_6.36 and Cd_1.25SnO_4.15, respectively, which is contrary to the general conclusions that interstitial cadmium atoms and oxygen vacancies are the main self-doping defects in Cd₂SnO₄ films.

200 nm 锡酸镉 (Cd ₂ SnO ₄ ) 透明导电层薄膜具有 6.35 Ω/sq 的薄层电阻和 1.27נ10 ^-4 Ωcm 的电阻率是通过磁控溅射耦合沉积的，可调节目标偏置电压，然后 620 C 30 分钟退火。之前报道的 Cd ₂ SnO ₄薄膜的最低电阻率为 1.28נ10 ^-4 Ωcm，使用 510 nm Cd ₂ SnO _{4 实现}。200 nm 溅射 Cd ₂ SnO ₄薄膜在 400-800 nm 之间的平均透射率为94%。沉积速率增加靶偏置电压可以影响 Cd ₂ SnO 的电性能和电性能₄部电影。Cd ₂ SnO ₄薄膜的表面功函数也可通过目标偏置电压进行调节。结合拉曼显微镜的Cd ₂ SnO ₄声子光谱和声子态密度表明，电性能最理想的Cd ₂ SnO ₄薄膜具有相同的声子响应。XPS 显示沉积的 Cd ₂ SnO ₄薄膜和 Cd ₂ SnO ₄薄膜的化学成分在 120 V 目标偏置电压下退火后为 Cd _2.03 SnO _6.36和 Cd _1.25 SnO _4.15，这与间隙镉原子和氧空位是 Cd ₂ SnO ₄薄膜中的主要自掺杂缺陷的一般结论相反。