Mg ions exhibit sluggish kinetics when migrating in most of traditional two-dimensional (2D) layered materials, leading to the dissatisfactory Mg-storage capabilities. Lattice engineering can settle this issue by constructing van der Waals’ heterostructures (vdWHs) comprising heterogeneous monolayers, which establish specific ionic diffusion path with lower energy barriers. Herein, MoS₂ monolayer and graphene (GR) are alternately overlapped with each other to construct a vdWH with a reduced Mg-diffusion barrier of 0.4 eV, and this brings the diffusion rate 11 orders of magnitude faster than that of pristine MoS₂. The facilitated diffusion kinetics delivers a desirable Mg-storage capacity of 210 mAh g⁻¹ at 20 mA g⁻¹, and outstanding rate performance (90 mAh g⁻¹ at 500 mA g⁻¹). Moreover, enhanced structure durability of MoS₂/GR allows the chemical reversibility for the repeated intercalation/deintercalation of Mg²⁺, thus 87% of initial remains after 300 cycles.

在大多数传统的二维（2D）层状材料中迁移时，Mg离子表现出缓慢的动力学，导致Mg储存能力不令人满意。晶格工程可以通过构建包括异质单层的范德华斯异质结构（vdWHs）解决这一问题，该异质单层建立具有较低能垒的特定离子扩散路径。在此，MoS ₂单层和石墨烯（GR）彼此交替地重叠以构建具有0.4eV的降低的Mg扩散势垒的vdWH，这使扩散速率比原始MoS ₂快11个数量级。促进的扩散动力学在20 mA g ^-1下提供了210 mAh g ^-1的理想Mg存储容量和优秀率性能（90毫安克^-1以500mA克^-1）。此外，MoS ₂ / GR的增强的结构耐久性允许Mg ²⁺的重复嵌入/脱嵌的化学可逆性，因此在300次循环后初始残留量为87％。