CsPbBr3 Nanocrystal Light-Emitting Diodes with Efficiency up to 13.4% Achieved by Careful Surface Engineering and Device Engineering,The Journal of Physical Chemistry C

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CsPbBr3 Nanocrystal Light-Emitting Diodes with Efficiency up to 13.4% Achieved by Careful Surface Engineering and Device Engineering
The Journal of Physical Chemistry C ( IF 3.3 ) Pub Date : 2021-01-29 , DOI: 10.1021/acs.jpcc.0c11085
Weilin Zheng ₁ , Qun Wan ₁ , Mingming Liu ₁ , Qinggang Zhang ₁ , Congyang Zhang ₁ , Ruixin Yan ₂ , Xiuping Feng ₁ , Long Kong ₁ , Liang Li _{1,

3}

Affiliation

Perovskite nanocrystals (NCs) have gained great interest for next-generation light-emitting diodes (LEDs) prized for their spectrally tunable, narrow luminescence and their defect-tolerant electronic structure. Here, we provide a careful surface engineering to balance the passivation and charge injection by controlling the ligand density of didodecyl dimethyl ammonium bromide on NCs, which not only offers an improved photoluminescence quantum yield of >70% for NCs but also guarantees the effective charge injection and transportation of CsPbBr₃ NC films for fabricating LEDs. Additionally, the optimization of the hole transport layer was implemented to offer more balanced charge transportation, which further improved the performance of CsPbBr₃ NC-based LEDs with a peak external quantum efficiency of 13.4%.

中文翻译：

精心的表面工程和器件工程技术可实现效率高达13.4％的CsPbBr ₃纳米晶体发光二极管

钙钛矿纳米晶体（NCs）对于下一代发光二极管（LED）引起了极大的兴趣，这些发光二极管因其光谱可调，窄发光和耐缺陷电子结构而备受赞誉。在这里，我们提供了仔细的表面工程设计，以通过控制NC上十二烷基二甲基溴化铵的配体密度来平衡钝化和电荷注入，这不仅为NC提供了大于70％的改进的光致发光量子产率，而且还保证了有效的电荷注入CsPbBr ₃ NC薄膜的制造和运输。此外，还对空穴传输层进行了优化，以提供更加平衡的电荷传输，从而进一步提高了CsPbBr ₃的性能。基于NC的LED的外部量子效率峰值为13.4％。

更新日期：2021-02-11

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