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Elimination of Charge Transport Layers in High-Performance Perovskite Solar Cells by Band Bending
ACS Applied Energy Materials ( IF 5.4 ) Pub Date : 2021-01-28 , DOI: 10.1021/acsaem.0c02535
Feng Lv 1, 2 , Yanqing Yao 1, 2 , Cunyun Xu 1, 2 , Dingyu Liu 1, 2 , Liping Liao 1, 2 , Gang Wang 3 , Guangdong Zhou 4 , Xusheng Zhao 5 , Debei Liu 6 , Xiude Yang 7 , Qunliang Song 1, 2
Affiliation  

In this paper, band bending at an ITO–perovskite interface was proposed to fabricate highly efficient perovskite solar cells without electron or hole transport layers. Direct deposition of a perovskite (MAPbI3-xClx) on clean ITO results in downward shift of the band of the perovskite by about 170 meV at the ITO–perovskite interface, preventing holes from recombining with electrons collected in the ITO. The device without a dedicated electron transport layer or any modifications achieves a power conversion efficiency (PCE) of 17.42%. The band bending direction changes when a Sn–Pb mixed narrow band gap (1.21 eV) perovskite ((FASnI3)0.6(MAPbI3)0.4) is used to replace MAPbI3-xClx. An upward band shift of about 110 meV was observed at the ITO–perovskite interface, facilitating hole extraction while blocking electron transfer from the perovskite to ITO. Perovskite solar cells made from this narrow band gap Sn–Pb mixed perovskite achieves a PCE of 18.31%, the highest one without a hole transport layer among those in the known literature studies. Thus, band bending is proved to be an effective way to eliminate charge transport layers in perovskite solar cells.

中文翻译:

通过带弯曲消除高性能钙钛矿太阳能电池中的电荷传输层

在本文中,提出了在ITO-钙钛矿界面处进行能带弯曲以制造没有电子或空穴传输层的高效钙钛矿太阳能电池。在干净的ITO上直接沉积钙钛矿(MAPbI 3- x Cl x)会导致钙钛矿带在ITO-钙钛矿界面处向下移动约170 meV,从而防止空穴与在ITO中收集的电子重新结合。没有专用电子传输层或进行任何修改的设备可实现17.42%的功率转换效率(PCE)。当Sn-Pb混合窄带隙(1.21 eV)钙钛矿((FASnI 30.6(MAPbI 30.4)用于替换MAPbI 3- x Cl x。在ITO-钙钛矿的界面上观察到约110 meV的向上带移,这有助于空穴提取,同时阻止了电子从钙钛矿转移到ITO。用这种窄带隙Sn-Pb混合钙钛矿制成的钙钛矿太阳能电池的PCE达到18.31%,是已知文献研究中最高的无空穴传输层的PCE。因此,带弯曲被证明是消除钙钛矿太阳能电池中电荷传输层的有效方法。
更新日期:2021-02-22
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