使用单个TiN过渡层在面内和面外极化的Si（100）上外延BaTiO <sub>3</sub>,ACS Applied Electronic Materials

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使用单个TiN过渡层在面内和面外极化的Si（100）上外延BaTiO ₃
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2021-01-25 , DOI: 10.1021/acsaelm.0c00842
Sandeep Vura ₁ , Vadivukkarasi Jeyaselvan ₁ , Rabindra Biswas ₂ , Varun Raghunathan ₂ , Shankar Kumar Selvaraja ₁ , Srinivasan Raghavan ₁

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BaTiO ₃与Si（100）的集成对于在完善的Si互补金属氧化物半导体（CMOS）技术平台中发挥其铁电性能至关重要。为了实现这个目标，外延BaTiO ₃在Si（100）上演示了具有平面内和平面外极化的薄膜，仅具有与CMOS兼容的单个TiN层。改变生长温度非常简单地引起偏振方向的这种变化。压电显微镜和光学二次谐波测量结果证实了面外和面内极化的存在。在相对较高的800°C温度下沉积的薄膜在室温下具有面内极化状态。发现非线性介电常数可与集成了更复杂过渡方案的最新薄膜相媲美。在相对较低的600°C温度下沉积的薄膜有缺陷，并且像退火时的薄膜一样恢复到800°C。但是，这些缺陷使它们在500°C时具有1.6％的大四方性的面外极化。平面外异常晶格扩展的变化与热膨胀系数（CTE）应变相结合，导致我们薄膜的取向选择。

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Epitaxial BaTiO3 on Si(100) with In-Plane and Out-of-Plane Polarization Using a Single TiN Transition Layer

The integration of BaTiO₃ with Si(100) is essential to exploit its ferroelectric capabilities in the well-established Si-complementary metal–oxide–semiconductor (CMOS) technological platform. To enable this goal, epitaxial BaTiO₃ films with both in-plane and out-of-plane polarization are demonstrated on Si(100) with just a single TiN layer that is also CMOS-compatible. This change in polarization direction is brought about very simply by changing the growth temperature. Piezo force microscopy and optical second-harmonic generation measurements confirm the presence of out-of-plane and in-plane polarization. Films deposited at relatively higher temperatures of 800 °C have polarization lying in-plane at room temperature. The nonlinear dielectric susceptibilities were found to be comparable to the state-of-the-art films integrated with more complex transition schemes. Films deposited at a relatively lower temperature of 600 °C are defective and revert to 800 °C like films on annealing. The defects however confer on them an out-of-plane polarization with a large tetragonality of 1.6% at 500 °C. The changes in anomalous lattice expansion in out-of-plane coupled with coefficient of thermal expansion (CTE) strain result in orientation selection in our films.

更新日期：2021-02-23

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