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Role of ALD Al2O3 Surface Passivation on the Performance of p-Type Cu2O Thin Film Transistors
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2021-01-14 , DOI: 10.1021/acsami.0c18915
Mari Napari 1 , Tahmida N. Huq 1 , David J. Meeth 2 , Mikko J. Heikkilä 3 , Kham M. Niang 2 , Han Wang 4 , Tomi Iivonen 3 , Haiyan Wang 4 , Markku Leskelä 3 , Mikko Ritala 3 , Andrew J. Flewitt 2 , Robert L. Z. Hoye 1 , Judith L. MacManus-Driscoll 1
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2021-01-14 , DOI: 10.1021/acsami.0c18915
Mari Napari 1 , Tahmida N. Huq 1 , David J. Meeth 2 , Mikko J. Heikkilä 3 , Kham M. Niang 2 , Han Wang 4 , Tomi Iivonen 3 , Haiyan Wang 4 , Markku Leskelä 3 , Mikko Ritala 3 , Andrew J. Flewitt 2 , Robert L. Z. Hoye 1 , Judith L. MacManus-Driscoll 1
Affiliation
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High-performance p-type oxide thin film transistors (TFTs) have great potential for many semiconductor applications. However, these devices typically suffer from low hole mobility and high off-state currents. We fabricated p-type TFTs with a phase-pure polycrystalline Cu2O semiconductor channel grown by atomic layer deposition (ALD). The TFT switching characteristics were improved by applying a thin ALD Al2O3 passivation layer on the Cu2O channel, followed by vacuum annealing at 300 °C. Detailed characterization by transmission electron microscopy–energy dispersive X-ray analysis and X-ray photoelectron spectroscopy shows that the surface of Cu2O is reduced following Al2O3 deposition and indicates the formation of a 1–2 nm thick CuAlO2 interfacial layer. This, together with field-effect passivation caused by the high negative fixed charge of the ALD Al2O3, leads to an improvement in the TFT performance by reducing the density of deep trap states as well as by reducing the accumulation of electrons in the semiconducting layer in the device off-state.
中文翻译：
ALD Al 2 O 3表面钝化对p型Cu 2 O薄膜晶体管性能的影响
高性能p型氧化物薄膜晶体管（TFT）在许多半导体应用中都具有巨大的潜力。但是，这些器件通常遭受低空穴迁移率和高截止态电流的困扰。我们制造了具有通过原子层沉积（ALD）生长的纯相多晶Cu 2 O半导体通道的p型TFT 。通过在Cu 2 O通道上施加一个薄的ALD Al 2 O 3钝化层，然后在300°C下进行真空退火，可以改善TFT的开关特性。通过透射电子显微镜-能量色散X射线分析和X射线光电子能谱进行的详细表征表明，随着Al 2 O的存在，Cu 2 O的表面被还原3沉积，表明形成了1–2 nm厚的CuAlO 2界面层。这与由ALD Al 2 O 3的高负固定电荷引起的场效应钝化一起，可通过降低深陷阱能级的密度以及减少电子在阱中的积累来改善TFT性能。半导体层处于器件关断状态。
更新日期：2021-01-27
中文翻译：
ALD Al 2 O 3表面钝化对p型Cu 2 O薄膜晶体管性能的影响
高性能p型氧化物薄膜晶体管（TFT）在许多半导体应用中都具有巨大的潜力。但是，这些器件通常遭受低空穴迁移率和高截止态电流的困扰。我们制造了具有通过原子层沉积（ALD）生长的纯相多晶Cu 2 O半导体通道的p型TFT 。通过在Cu 2 O通道上施加一个薄的ALD Al 2 O 3钝化层，然后在300°C下进行真空退火，可以改善TFT的开关特性。通过透射电子显微镜-能量色散X射线分析和X射线光电子能谱进行的详细表征表明，随着Al 2 O的存在，Cu 2 O的表面被还原3沉积，表明形成了1–2 nm厚的CuAlO 2界面层。这与由ALD Al 2 O 3的高负固定电荷引起的场效应钝化一起，可通过降低深陷阱能级的密度以及减少电子在阱中的积累来改善TFT性能。半导体层处于器件关断状态。
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