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High-Performance Phototransistors Based on MnPSe3 and Its Hybrid Structures with Au Nanoparticles
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2021-01-10 , DOI: 10.1021/acsami.0c19530
Xu Han 1, 2 , Pengbo Song 2 , Jie Xing 1 , Zhong Chen 3 , Danyang Li 1 , Guangyuan Xu 1 , Xiaojun Zhao 1 , Fangyuan Ma 1 , Dongke Rong 1 , Youguo Shi 2 , Md. Rasidul Islam 4 , Kong Liu 4 , Yuan Huang 2
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2021-01-10 , DOI: 10.1021/acsami.0c19530
Xu Han 1, 2 , Pengbo Song 2 , Jie Xing 1 , Zhong Chen 3 , Danyang Li 1 , Guangyuan Xu 1 , Xiaojun Zhao 1 , Fangyuan Ma 1 , Dongke Rong 1 , Youguo Shi 2 , Md. Rasidul Islam 4 , Kong Liu 4 , Yuan Huang 2
Affiliation
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Layered metal thiophosphates with a general formula MPX3 (M is a group VIIB or VIII element and X is a chalcogen) have emerged as a novel member in a two-dimensional (2D) family with fascinating physical and chemical properties. Herein, the photoelectric performance of the few-layer MnPSe3 was studied for the first time. The multilayer MnPSe3 shows p-type conductivity and its field-effect transistor delivers an ultralow dark current of about 0.1 pA. The photoswitching ratio reaches ∼103 at a wavelength of 375 nm, superior to that of other thiophosphates. A responsivity and detectivity of 392.78 mA/W and 2.19 × 109 Jones, respectively, have been demonstrated under irradiation of 375 nm laser with a power intensity of 0.1 mW/cm2. In particular, the photocurrent can be remarkably increased up to 30 times by integrating a layer of Au nanoparticle array at the bottom of the MnPSe3 layer. The metal–semiconductor interfacial electric field and the strain-induced flexoelectric polarization field caused by the underlying nanorugged Au nanoparticles are proposed to contribute together to the significant current improvement.
中文翻译：
基于MnPSe 3的高性能光电晶体管及其与Au纳米粒子的杂化结构
具有二维MPX 3（M为VIIB或VIII族元素，X为硫族元素）的层状金属硫代磷酸盐已成为具有令人着迷的物理和化学性质的二维（2D）系列中的新型成员。在此，首次研究了多层MnPSe 3的光电性能。多层MnPSe 3具有p型导电性，其场效应晶体管可提供约0.1 pA的超低暗电流。在375 nm的波长下，光开关比达到〜10 3，优于其他硫代磷酸酯。响应度和检测度为392.78 mA / W和2.19×10 9分别在功率为0.1 mW / cm 2的375 nm激光照射下证明了Jones 。特别地，通过在MnPSe 3层的底部集成一层Au纳米颗粒阵列，可以将光电流显着增加多达30倍。提出了由下面的纳米凹凸金纳米粒子引起的金属-半导体界面电场和应变感应的弯曲电极化场，共同为电流的显着改善做出了贡献。
更新日期：2021-01-20
中文翻译：
基于MnPSe 3的高性能光电晶体管及其与Au纳米粒子的杂化结构
具有二维MPX 3（M为VIIB或VIII族元素，X为硫族元素）的层状金属硫代磷酸盐已成为具有令人着迷的物理和化学性质的二维（2D）系列中的新型成员。在此，首次研究了多层MnPSe 3的光电性能。多层MnPSe 3具有p型导电性，其场效应晶体管可提供约0.1 pA的超低暗电流。在375 nm的波长下，光开关比达到〜10 3，优于其他硫代磷酸酯。响应度和检测度为392.78 mA / W和2.19×10 9分别在功率为0.1 mW / cm 2的375 nm激光照射下证明了Jones 。特别地，通过在MnPSe 3层的底部集成一层Au纳米颗粒阵列，可以将光电流显着增加多达30倍。提出了由下面的纳米凹凸金纳米粒子引起的金属-半导体界面电场和应变感应的弯曲电极化场，共同为电流的显着改善做出了贡献。
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