For the commercial implementation of GaN-based high electron mobility transistor (HEMT) and GaN-based pseudomorphic HEMT (pHEMT), the temperature dependency of the two-dimensional electron gas (2DEG) is crucial. Herein, the temperature dependency of 2DEG for AlGaN/GaN HEMT and AlGaN/InGaN/GaN pHEMT has been analyzed theoretically and experimentally over the temperature range of −40 °C to 150 °C. From the experimental and numerical data, a decreasing nature of 2DEG density is noticed for both the devices. The reduction rate in magnitude is higher for AlGaN/GaN HEMT compared to AlGaN/InGaN/GaN pHEMT. It is identified that the reduction of conduction band offset at higher temperatures is responsible for this decreasing nature. Incorporation of an extra 5 nm thick pseudomorphic layer of InGaN in AlGaN/InGaN/GaN pHEMT improves the 2DEG transport properties and enhances the overall transistor performance. Comparatively, the AlGaN/InGaN/GaN pHEMT is found to be exhibiting better 2DEG stability with temperature than AlGaN/GaN HEMT.

对于基于GaN的高电子迁移率晶体管（HEMT）和基于GaN的伪晶HEMT（pHEMT）的商业实现，二维电子气（2DEG）的温度依赖性至关重要。在此，从理论上和实验上在-40°C至150°C的温度范围内分析了2DEG对AlGaN / GaN HEMT和AlGaN / InGaN / GaN pHEMT的温度依赖性。从实验和数值数据来看，两种器件的2DEG密度都有所下降。与AlGaN / InGaN / GaN pHEMT相比，AlGaN / GaN HEMT的幅度降低率更高。可以确定，在较高温度下导带偏移的减小是造成这种下降性质的原因。在AlGaN / InGaN / GaN pHEMT中加入额外的5 nm厚的InGaN拟晶层可改善2DEG传输性能并增强整体晶体管性能。相比之下，发现AlGaN / InGaN / GaN pHEMT与AlGaN / GaN HEMT相比具有更好的2DEG温度稳定性。