Copper selenide (Cu₂Se) is a promising thermoelectric material and α-phase Cu₂Se provides relatively safe thermoelectric modules for thin film thermoelectric device in contrast to some toxic materials currently on the market. In this work, nanocrystalline Cu₂Se thin film with uniform element distribution was fabricated at room temperature through an effective combination reaction method by implanting sputtered Cu⁺ ions into Se precursor. Then, self-assembled growth of Cu₂Se thin films with desired α-phase and well crystallinity was successfully achieved with optimization of annealing temperature. Interestingly, the growth orientation has obviously affected by the annealing temperature, which significantly affects the thermoelectric properties. Consequently, the Seebeck coefficients increase with the increase in the orientation factor of the (0l0) preferred orientation, which enhances power factor. The high maximum power factor of 9.23 μWcm^-1K^-2 is achieved for α-Cu₂Se thin film with (0l0) preferred orientation, demonstrating that the method used in this work has great potential in developing low-cost and high-performance thermoelectric thin films from relatively earth-abundant elements.

硒化铜（Cu ₂ Se）是一种很有前途的热电材料，与目前市场上的某些有毒材料相比，α相Cu ₂ Se为薄膜热电设备提供了相对安全的热电模块。在这项工作中，通过将溅射的Cu ⁺离子注入Se前驱体中，通过有效的组合反应方法在室温下制备了具有均匀元素分布的纳米晶Cu ₂ Se薄膜。然后，Cu _2的自组装生长通过优化退火温度成功地获得了具有所需α相和良好结晶度的Se薄膜。有趣的是，生长方向明显受退火温度的影响，退火温度显着影响热电性能。因此，塞贝克系数随着（0 l 0）优选取向的取向因子的增加而增加，这提高了功率因数。9.23μWcm的高的最大功率因数^-1 ķ ^-2为α-Cu系实现₂硒薄膜（0升0）较好的取向，表明这项工作中使用的方法具有很大的潜力，可以从相对富含地球的元素开发出低成本和高性能的热电薄膜。