In this study, the negative drain-induced barrier lowering (DIBL) and negative differential resistance (NDR) effects are investigated in detail in negative-capacitance field-effect transistors (NCFETs) with a fully depleted silicon-on-insulator structure. We show that the negative DIBL and NDR effects are caused by a decrease in the internal gate voltage, which is closely related to the matching between the ferroelectric capacitance and the total gate capacitance of the underlying FET. Further, we define the remnant-polarization-to-coercive-field ratio (R_PE), which can be directly used as a parameter to quantify the DIBL effect and describe the sign of the NDR effect. DIBL tends to be consistent with the same R_PE, despite exhibiting different current intensities in the strong inversion region. With regard to different R_PE, the DIBL effect decreases but the NDR effect increases as R_PE decreases. Our work may provide further insight for NCFET designers to adjust capacitance matching to optimize the DIBL and NDR effects.

在这项研究中，在具有完全耗尽的绝缘体上硅结构的负电容场效应晶体管（NCFET）中，详细研究了负漏极引起的势垒降低（DIBL）和负差分电阻（NDR）效应。我们显示出负的DIBL和NDR效应是由内部栅极电压的降低引起的，内部栅极电压的降低与铁电电容与基础FET的总栅极电容之间的匹配密切相关。此外，我们定义了剩余极化与矫顽场比（R _PE），该比值可以直接用作量化DIBL效应并描述NDR效应的符号的参数。DIBL往往与相同的R _PE保持一致，尽管在强反演区域中表现出不同的电流强度。对于不同的R _PE而言，DIBL效应会降低，但NDR效应会随着R _PE的降低而增加。我们的工作可能会为NCFET设计人员提供进一步的见解，以调整电容匹配以优化DIBL和NDR效果。