A new quaternary chalcogenide Rb₃Ga₃Ge₇S₂₀ belongs to A–M^IIIA–M^IVA–Q system (A ​= ​Li, Na, K, Rb; Q ​= ​S, Se, Te) was discovered for the first time. And it was obtained through a conventional solid-state reaction at high-temperature. The crystal structure was determined by single-crystal X-ray diffraction analysis, which indicates that Rb₃Ga₃Ge₇S₂₀ crystallizes in monoclinic system P2₁/c space group (a ​= ​6.7704(5)Å, b ​= ​37.670(3)Å, c ​= ​6.7117(5) Å, V ​= ​1711.7(2) ų, and Z ​= ​2). The crystal structure of the title compound is assembled by the isolated quasi-2D ^∞₂[(Ga/Ge)₁₀S₂₁]^5- layers, and Rb⁺ cations located in the large channels loosely. UV–vis–NIR spectroscopy measurement reveals that the optical band of the title compound is 3.19 ​eV, and it shows weak photoluminescence property with excitation wavelength of λ_ex ​= ​320 ​nm. In addition, the electronic structure calculations on Rb₃Ga₃Ge₇S₂₀ reveal that the band gap is mainly determined by the GeS₄ groups.

一种新的硫属化物季RB ₃嘎₃葛₇小号₂₀属于-M ^IIIA -M ^IVA -Q系统（A =锂，钠，钾，铷; Q = S，硒，碲）被发现为第一次。并通过常规的高温固相反应获得。该晶体结构由单晶X射线衍射分析，这表明确定RB ₃镓₃葛₇小号_20个结晶单斜晶系P 2 ₁ / ç空间群（一个 = 6.7704（5），b  = 37.670（3）Å，c = 6.7117（5）A，V  = 1711.7（2）埃³，与Ž  = 2）。标题化合物的晶体结构是由分离的准二维组装^∞ ₂ [（GA / Ge）的₁₀ š ₂₁ ] ^5-层，和Rb ⁺位于大通道松散阳离子。的UV-vis-NIR光谱测定表明，标题化合物的光学带是3.19电子伏特，并且它示出了具有的激发波长的光致发光弱属性λ _EX  = 320nm处。另外，Rb ₃ Ga ₃ Ge ₇ S ₂₀的电子结构计算表明带隙主要由GeS ₄组决定。