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Solar-Blind Photodetector Based on Single Crystal Ga2O3 Film Prepared by a Unique Ion-Cutting Process
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2020-12-28 , DOI: 10.1021/acsaelm.0c00990 Qinghua Ren 1, 2 , Wenhui Xu 1 , Zhenghao Shen 1, 3 , Tiangui You 1 , Qiang Liu 1 , Chenhe Liu 1 , Lantian Zhao 1, 3 , Lingli Chen 1, 3 , Wenjie Yu 1
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2020-12-28 , DOI: 10.1021/acsaelm.0c00990 Qinghua Ren 1, 2 , Wenhui Xu 1 , Zhenghao Shen 1, 3 , Tiangui You 1 , Qiang Liu 1 , Chenhe Liu 1 , Lantian Zhao 1, 3 , Lingli Chen 1, 3 , Wenjie Yu 1
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A solar-blind photodetector based on single crystal β-Ga2O3 thin film transferred on a SiC substrate with an Al2O3 buffer layer was prepared by a unique ion-cutting process. The structure and micromorphology of the transferred single crystal Ga2O3 film was characterized by X-ray diffraction, X-ray photoelectron spectroscopy, and scanning electron microscopy, respectively. Then, a photodetector with a metal–semiconductor–metal (MSM) structure was fabricated. The photodetector performance of the MSM photodetector cells based on the ion-cutting single crystal Ga2O3 thin film reveals an excellent solar-blind photodetector performance such as high spectra selectivity, extremely low dark current (28.7 pA at 10 V), high photocurrent (27.4 nA at 10 V), high sensitivity to 254 nm UV light with a photocurrent-to-dark current ratio of 953, relatively fast response time, and excellent stability. Furthermore, the inner mechanism was systematically discussed. This work not only paves a way to fabricate high-performance photodetectors based on single crystal semiconductor films but also opens up the opportunities of Ga2O3 single crystal film for a variety of photonic and electronic applications in optical positioning, tracking, imaging, and communications.
中文翻译：
基于独特离子切割工艺制备的基于Ga 2 O 3单晶膜的日盲光电探测器
基于单晶的β-Ga一种太阳能盲光电检测器2 ö 3薄膜转印在SiC基板上用Al 2 ö 3缓冲层通过一种独特的离子切割方法制备。通过X射线衍射，X射线光电子能谱和扫描电子显微镜分别表征了转移的单晶Ga 2 O 3膜的结构和微观形态。然后，制造了具有金属-半导体-金属（MSM）结构的光电探测器。基于离子切割单晶Ga 2 O 3的MSM光电探测器电池的光电探测器性能薄膜显示出出色的日盲型光电探测器性能，例如高光谱选择性，极低的暗电流（在10 V时为28.7 pA），高光电流（在10 V时为27.4 nA），对254 nm紫外光具有高灵敏度的光电流。 -暗电流比为953，响应时间相对较快，稳定性极佳。此外，系统地讨论了内部机制。这项工作不仅为制造基于单晶半导体膜的高性能光电检测器铺平了道路，而且为Ga 2 O 3单晶膜在光学定位，跟踪，成像和光学定位中的各种光子和电子应用打开了机会。通讯。
更新日期：2021-01-26
中文翻译：
基于独特离子切割工艺制备的基于Ga 2 O 3单晶膜的日盲光电探测器
基于单晶的β-Ga一种太阳能盲光电检测器2 ö 3薄膜转印在SiC基板上用Al 2 ö 3缓冲层通过一种独特的离子切割方法制备。通过X射线衍射，X射线光电子能谱和扫描电子显微镜分别表征了转移的单晶Ga 2 O 3膜的结构和微观形态。然后，制造了具有金属-半导体-金属（MSM）结构的光电探测器。基于离子切割单晶Ga 2 O 3的MSM光电探测器电池的光电探测器性能薄膜显示出出色的日盲型光电探测器性能，例如高光谱选择性，极低的暗电流（在10 V时为28.7 pA），高光电流（在10 V时为27.4 nA），对254 nm紫外光具有高灵敏度的光电流。 -暗电流比为953，响应时间相对较快，稳定性极佳。此外，系统地讨论了内部机制。这项工作不仅为制造基于单晶半导体膜的高性能光电检测器铺平了道路，而且为Ga 2 O 3单晶膜在光学定位，跟踪，成像和光学定位中的各种光子和电子应用打开了机会。通讯。
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