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Graphene/MoS2/Graphene Vertical Heterostructure‐Based Broadband Photodetector with High Performance
Advanced Materials Interfaces ( IF 4.3 ) Pub Date : 2020-12-23 , DOI: 10.1002/admi.202001730 Shan Gao 1 , Ziqian Wang 1 , Huide Wang 1 , Fanxu Meng 1 , Pengfei Wang 1 , Si Chen 1 , Yonghong Zeng 1 , Jinlai Zhao 1 , Haiguo Hu 1 , Rui Cao 1 , Zhongquan Xu 1 , Zhinan Guo 1 , Han Zhang 1
Advanced Materials Interfaces ( IF 4.3 ) Pub Date : 2020-12-23 , DOI: 10.1002/admi.202001730 Shan Gao 1 , Ziqian Wang 1 , Huide Wang 1 , Fanxu Meng 1 , Pengfei Wang 1 , Si Chen 1 , Yonghong Zeng 1 , Jinlai Zhao 1 , Haiguo Hu 1 , Rui Cao 1 , Zhongquan Xu 1 , Zhinan Guo 1 , Han Zhang 1
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Molybdenum disulfide (MoS2) is considered as a promising 2D material for optoelectronic applications due to its excellent electrical and optical properties. A semimetal material with zero bandgap, like graphene, can extend response range of MoS2‐based photodetectors to wider spectral region. Here, a graphene/MoS2/graphene vertical heterostructure is demonstrated, where Schottky barriers are formed between MoS2 and graphenes. The introduction of graphene can effectively widen the working wavelength of the device from visible to IR range. Simultaneously, the shortened transmit distance for the photogenerated carriers between the source and drain electrodes in the vertical heterostructure leads to faster response speed compared with MoS2‐based photodetectors. Besides, the graphene/MoS2/graphene photodetector shows excellent performance with an enhanced responsivity of 414 A W−1 at 532 nm and 376 A W−1 at 2000 nm, and a broad working wavelength ranging from 405 to 2000 nm. These excellent performances prove that the design of graphene based vertical heterostructure can provide new ideas for the development of high‐performance photodetectors in future.
中文翻译：
高性能的基于石墨烯/ MoS2 /石墨烯垂直异质结构的宽带光电探测器
由于其优异的电学和光学特性，二硫化钼（MoS 2）被认为是有前途的光电应用二维材料。具有零带隙的半金属材料（例如石墨烯）可以将基于MoS 2的光电探测器的响应范围扩展到更宽的光谱区域。在此，说明了石墨烯/ MoS 2 /石墨烯的垂直异质结构，其中在MoS 2和石墨烯之间形成了肖特基势垒。石墨烯的引入可以有效地将器件的工作波长从可见光范围扩展到IR范围。同时，垂直异质结构中源极和漏极之间光生载流子的传输距离缩短，导致响应速度比MoS更快基于2的光电探测器。另外，石墨烯/ MOS 2 /石墨烯光电检测器示出了具有414甲W的响应度增强性能优良-1在532nm和376的一个w -1在2000纳米，和一个宽工作波长范围从405至2000纳米。这些优异的性能证明，基于石墨烯的垂直异质结构的设计可以为未来高性能光电探测器的开发提供新思路。
更新日期：2021-02-05
中文翻译：
高性能的基于石墨烯/ MoS2 /石墨烯垂直异质结构的宽带光电探测器
由于其优异的电学和光学特性，二硫化钼（MoS 2）被认为是有前途的光电应用二维材料。具有零带隙的半金属材料（例如石墨烯）可以将基于MoS 2的光电探测器的响应范围扩展到更宽的光谱区域。在此，说明了石墨烯/ MoS 2 /石墨烯的垂直异质结构，其中在MoS 2和石墨烯之间形成了肖特基势垒。石墨烯的引入可以有效地将器件的工作波长从可见光范围扩展到IR范围。同时，垂直异质结构中源极和漏极之间光生载流子的传输距离缩短，导致响应速度比MoS更快基于2的光电探测器。另外，石墨烯/ MOS 2 /石墨烯光电检测器示出了具有414甲W的响应度增强性能优良-1在532nm和376的一个w -1在2000纳米，和一个宽工作波长范围从405至2000纳米。这些优异的性能证明，基于石墨烯的垂直异质结构的设计可以为未来高性能光电探测器的开发提供新思路。
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