Entropy Engineered Cubic n‐Type AgBiSe2 Alloy with High Thermoelectric Performance in Fully Extended Operating Temperature Range,Advanced Energy Materials

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Entropy Engineered Cubic n‐Type AgBiSe2 Alloy with High Thermoelectric Performance in Fully Extended Operating Temperature Range
Advanced Energy Materials ( IF 24.4 ) Pub Date : 2020-12-21 , DOI: 10.1002/aenm.202003304
Huaxing Zhu ₁ , Ting Zhao ₁ , Bin Zhang ₂ , Zibing An ₃ , Shengcheng Mao ₃ , Guoyu Wang ₄ , Xiaodong Han ₃ , Xu Lu ₁ , Jiangwei Zhang ₅ , Xiaoyuan Zhou _{1,

2}

Affiliation

Developing high performance n‐type thermoelectric (TE) materials is fundamentally important for developing high efficiency TE devices. AgBiSe₂, which reveals superior n‐type TE performance in a cubic phase, crystallizes in a hexagonal phase at room temperature, and typically, undergoes phase transitions to a cubic phase at a temperature above 580 K. Here, for the first time, through entropy optimization with lead‐selenides (≥9.9 mol%), the high‐temperature cubic phase of AgBiSe₂ is stabilized from 300 to 800 K. Furthermore, the AgBiSe₂‐PbSe pseudo‐binary diagram is established. The resultant alloys with optimized entropy possess unique local distorted cubic lattices, which contribute low lattice thermal conductivity approaching 0.3 W m⁻¹ K⁻¹ in extended operating temperature range. Consequently, a peak figure of merit zT value of ≈0.8 at 800 K and a record‐high average zT value of 0.42 for n‐type I‐V‐VI₂ compounds are attained in pure phase cubic n‐type (AgBiSe₂)₁₋_x(PbSe)_x solid solutions. These results pave the way for developing new TE materials via entropy engineering.

中文翻译：

在完全扩展的工作温度范围内具有高热电性能的熵工程立方n型AgBiSe2合金

开发高性能n型热电（TE）材料对于开发高效TE器件至关重要。AgBiSe ₂在立方相中显示出优异的n型TE性能，在室温下以六方相结晶，并且通常在580 K以上的温度下发生相变，转变为立方相。用硒化铅（≥9.9mol％）进行熵优化，AgBiSe ₂的高温立方相从300稳定到800K。此外，建立了AgBiSe ₂ ‐PbSe伪二元图。具有最佳熵的所得合金具有独特的局部畸变立方晶格，这有助于降低晶格热导率，接近0.3 W m ^-1在扩展的工作温度范围内为K ^-1。因此，在纯相立方n型（AgBiSe ₂）_1中，n型I-V-VI ₂化合物的品质因数zT值在800 K时达到≈0.8的峰值，创历史新高的平均zT值为0.42。₋_x（PbSe）_x固溶体。这些结果为通过熵工程开发新的TE材料铺平了道路。

更新日期：2021-02-05

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