Defect-Tolerant TiO2-Coated and Discretized Photoanodes for >600 h of Stable Photoelectrochemical Water Oxidation,ACS Energy Letters

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Defect-Tolerant TiO2-Coated and Discretized Photoanodes for >600 h of Stable Photoelectrochemical Water Oxidation
ACS Energy Letters ( IF 19.3 ) Pub Date : 2020-12-16 , DOI: 10.1021/acsenergylett.0c02521
Xin Shen _{1,

2} , Maoqing Yao ₃ , Ke Sun ₄ , Tianshuo Zhao _{1,

2} , Yulian He _{1,

2} , Chun-Yung Chi ₃ , Chongwu Zhou ₃ , Paul Daniel Dapkus ₃ , Nathan S. Lewis ₄ , Shu Hu _{1,

2}

Affiliation

Arrays of GaAs nanowires have been grown by selective-area metal–organic chemical-vapor deposition (MOCVD) onto photoactive planar Si substrates. This tandem, vertical-wire-array-on-planar absorber was then coated by atomic layer deposition (ALD) of an amorphous TiO₂ (a-TiO₂) stabilization layer, followed by deposition of a NiO_x electrocatalyst layer. The tandem planar Si/nanowire GaAs/a-TiO₂/NiO_x photoanodes exhibited continuous solar-driven water oxidation in 1.0 M KOH(aq) for over 600 h without substantial photocurrent decay. The preservation of the nanowire morphology and structural integrity during >600 h of photoanodic operation confirms the benefits of mitigating and isolating nanoscale defects via the architecture of discretized absorbers on a self-passivating and insulating substrate. Nanoscale morphology and compositions of the photoanode after 600 h of testing were characterized to reveal the self-limiting corrosion behavior. It provides a promising approach to develop efficient but otherwise unstable absorbers such as III–V materials into defect-tolerant, corrosion-resistant photoanodes.

中文翻译：

耐缺陷的TiO ₂涂层和离散型光阳极可进行> 600 h的稳定光电化学水氧化

通过选择性区域金属有机化学气相沉积（MOCVD）将GaAs纳米线阵列生长到光敏平面Si衬底上。此串联，垂直线阵列上平面吸收剂然后通过无定形的TiO原子层沉积（ALD）涂覆₂（一个-TiO ₂）稳定层，接着是氧化镍沉积_X电极催化剂层。串联平面Si /纳米线GaAs / a- TiO ₂ / NiO _x光电阳极在1.0 M KOH（aq）中表现出持续的太阳能驱动的水氧化600个小时以上，而光电流却没有明显衰减。在> 600 h的光阳极操作过程中，纳米线的形态和结构完整性得以保留，这证实了通过在自钝化和绝缘衬底上离散化吸收体的结构来缓解和隔离纳米级缺陷的好处。经过600小时的测试后，光电阳极的纳米级形态和组成被表征为揭示了自限腐蚀行为。它提供了一种有前途的方法，可以将有效的但不稳定的吸收剂（例如III-V类材料）开发成耐缺陷，耐腐蚀的光阳极。

更新日期：2021-01-08

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