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High-quality efficient anti-reflection nanopillar structures layer prepared by a new type vibration-assisted UV nanoimprint lithography
Journal of Manufacturing Processes ( IF 6.1 ) Pub Date : 2020-12-16 , DOI: 10.1016/j.jmapro.2020.11.028
Yan Gu , Si Chen , Jieqiong Lin , HongYu Xu , XianYao Li

In order to effectively improve the filling rate of photoresist, a non-resonant vibration-assisted UV nanoimprint lithography (NRVA-NIL) is proposed to prepare the AR layer. The vibration by piezoelectric driven is applied below the photoresist layer, and increase the area of the photoresist contacting the sidewall of nanostructures and reduce the surface tension to a certain extent. To verify the rationality of introducing vibration a new motion model is built and the effect of frequency and amplitude with filling rate is qualitative analyzed by FVM for experiments. Then, the transferred pattern is observed by experiment. The anti-reflection nanopillar structures layer prepared by the new type vibration-assisted UV nanoimprint lithography has the better surface morphology and higher filling rate. The filling rate of photoresist increases by 39 % compared to the traditional nanoimprint lithography without vibration, which can effectively reduce the reflectivity of incident light and increase the absorption. The reflectivity of AR layer prepared by NRVA-NIL is reduced by 68 % compared by other processing methods. As a result, the power conversion efficiency of solar cells with AR layer is improved by 21.07 % compared to the bare solar cells. In addition, due to the increased contact angle caused by the nano-pattern, the surface with AR nanopilliar structures layer exhibits hydrophobicity. The enhanced hydrophobicity provides additional self-cleaning capabilities for AR layer.



中文翻译:

通过新型振动辅助紫外纳米压印光刻技术制备的高质量高效抗反射纳米柱结构层

为了有效提高光刻胶的填充率,提出了一种非共振振动辅助紫外纳米压印光刻技术(NRVA-NIL)来制备AR层。通过压电驱动的振动被施加在光致抗蚀剂层下方,并且增加了光致抗蚀剂接触纳米结构的侧壁的面积并且在一定程度上降低了表面张力。为了验证引入振动的合理性,建立了一个新的运动模型,并通过FVM定性分析了频率和振幅对填充率的影响,以进行实验。然后,通过实验观察转印的图案。通过新型振动辅助UV纳米压印光刻技术制备的抗反射纳米柱结构层具有较好的表面形态和较高的填充率。与传统的无振动的纳米压印光刻相比,光刻胶的填充率提高了39%,可以有效降低入射光的反射率并增加吸收率。与其他加工方法相比,NRVA-NIL制备的AR层的反射率降低了68%。结果,与裸太阳能电池相比,具有AR层的太阳能电池的功率转换效率提高了21.07%。另外,由于纳米图案引起的接触角增加,具有AR纳米孔结构层的表面表现出疏水性。增强的疏水性为AR层提供了额外的自清洁功能。与其他加工方法相比,NRVA-NIL制备的AR层的反射率降低了68%。结果,与裸太阳能电池相比,具有AR层的太阳能电池的功率转换效率提高了21.07%。另外,由于纳米图案引起的接触角增加,具有AR纳米孔结构层的表面表现出疏水性。增强的疏水性为AR层提供了额外的自清洁功能。与其他加工方法相比,NRVA-NIL制备的AR层的反射率降低了68%。结果,与裸太阳能电池相比,具有AR层的太阳能电池的功率转换效率提高了21.07%。另外,由于纳米图案引起的接触角增加,具有AR纳米孔结构层的表面表现出疏水性。增强的疏水性为AR层提供了额外的自清洁功能。

更新日期:2020-12-16
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