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MoS2-on-AlN Enables High-Performance MoS2 Field-Effect Transistors through Strain Engineering
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2020-11-30 , DOI: 10.1021/acsami.0c16079 Zhenghao Gu 1 , Tianbao Zhang 1 , Jiangliu Luo 2 , Yang Wang 1 , Hao Liu 1 , Lin Chen 1 , Xinke Liu 2, 3 , Wenjie Yu 4 , Hao Zhu 1 , Qing-Qing Sun 1 , David Wei Zhang 1
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2020-11-30 , DOI: 10.1021/acsami.0c16079 Zhenghao Gu 1 , Tianbao Zhang 1 , Jiangliu Luo 2 , Yang Wang 1 , Hao Liu 1 , Lin Chen 1 , Xinke Liu 2, 3 , Wenjie Yu 4 , Hao Zhu 1 , Qing-Qing Sun 1 , David Wei Zhang 1
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Molybdenum disulfide (MoS2) has substantial application prospects in the field of electronic devices. The fabrication of devices of excellent quality based on MoS2 films is an important research direction. In this study, based on the atomic layer deposition technique, large-area MoS2 films were grown, and top-gate MoS2-based field-effect transistor arrays were fabricated on four substrates (AlN, GaN, sapphire, and SiO2). It was found that the interface defects that were introduced by lattice mismatch and roughness of the growth substrate could cause an exponential (102) drop in mobility. Because of the small lattice mismatch and excellent surface quality, transistors on the AlN substrate have shown an enhanced mobility (10.45 cm2 V–1 s–1) compared to transistors on the other substrates. This study proves that the AlN substrate is a superior substrate for large-area and high-performance MoS2 film synthesis. This result can also be applied in higher-level microelectronic systems, such as in digital logic circuit design.
中文翻译：
MoS 2 -on-AlN通过应变工程实现高性能的MoS 2场效应晶体管
二硫化钼（MoS 2）在电子设备领域具有广阔的应用前景。基于MoS 2薄膜的高质量器件的制造是重要的研究方向。在这项研究中，基于原子层沉积技术，生长了大面积的MoS 2膜，并在四个衬底（AlN，GaN，蓝宝石和SiO 2）上制造了基于顶栅MoS 2的场效应晶体管阵列。。已经发现，由于晶格失配和生长衬底的粗糙度而引入的界面缺陷可能导致指数（10 2）的移动性下降。由于较小的晶格失配和出色的表面质量，与其他基板上的晶体管相比，AlN基板上的晶体管显示出更高的迁移率（10.45 cm 2 V –1 s –1）。这项研究证明，AlN衬底是用于大面积和高性能MoS 2薄膜合成的优良衬底。该结果还可以应用于更高级别的微电子系统，例如数字逻辑电路设计。
更新日期：2020-12-09
中文翻译：
MoS 2 -on-AlN通过应变工程实现高性能的MoS 2场效应晶体管
二硫化钼（MoS 2）在电子设备领域具有广阔的应用前景。基于MoS 2薄膜的高质量器件的制造是重要的研究方向。在这项研究中，基于原子层沉积技术，生长了大面积的MoS 2膜，并在四个衬底（AlN，GaN，蓝宝石和SiO 2）上制造了基于顶栅MoS 2的场效应晶体管阵列。。已经发现，由于晶格失配和生长衬底的粗糙度而引入的界面缺陷可能导致指数（10 2）的移动性下降。由于较小的晶格失配和出色的表面质量，与其他基板上的晶体管相比，AlN基板上的晶体管显示出更高的迁移率（10.45 cm 2 V –1 s –1）。这项研究证明，AlN衬底是用于大面积和高性能MoS 2薄膜合成的优良衬底。该结果还可以应用于更高级别的微电子系统，例如数字逻辑电路设计。
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