通过新型Ga 2 O 3 / SnO 2复合电子输运双层，超宽带隙氧化物半导体触发了钙钛矿太阳能电池的性能改善,ACS Applied Materials & Interfaces

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通过新型Ga ₂ O ₃ / SnO ₂复合电子输运双层，超宽带隙氧化物半导体触发了钙钛矿太阳能电池的性能改善
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2020-11-26 , DOI: 10.1021/acsami.0c16168
Hang Dong _{1,

2} , Shangzheng Pang ₂ , Yu Xu ₂ , Zhe Li ₂ , Zeyang Zhang _{1,

2} , Weidong Zhu _{1,

2} , Dazheng Chen _{1,

2} , He Xi ₂ , Zhenhua Lin _{1,

2} , Jincheng Zhang _{1,

2} , Yue Hao ₂ , Chunfu Zhang _{1,

2}

Affiliation

不可避免的界面电荷复合会严重限制钙钛矿太阳能电池（PSC）的性能，特别是对于开路电压（V _oc）和填充因子的参数。在这项研究中，将超宽带隙半导体材料Ga ₂ O ₃引入到掺氟氧化锡和SnO _2之间，以通过形成Ga ₂ O ₃ / SnO ₂电子传输双层来调节界面电荷动力学。镓₂ O ₃具有合适的导带最小值，这有利于电子传输，同时具有非常深的价带最大值，可以将其视为有效的阻挡层。这种创新的结构触发了较低的功函和电子传输双层表面更光滑的优点，从而产生了高质量的钙钛矿薄膜。此外，引入的Ga ₂ O ₃具有出色的空穴阻挡性能层可有效减少界面重组。所有这些性质可以帮助协同提高载流子的提取和运输能力。最后，大大提高了PSC的效率和稳定性。所有结果表明，引入Ga ₂ O ₃超宽带隙氧化物半导体可以有效提高PSC的性能。

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Ultrawide Band Gap Oxide Semiconductor-Triggered Performance Improvement of Perovskite Solar Cells via the Novel Ga2O3/SnO2 Composite Electron-Transporting Bilayer

The performance of perovskite solar cells (PSCs), especially for the parameters of open-circuit voltage (V_oc) and fill factor, is seriously restricted by the unavoidable interfacial charge recombination. In this study, an ultrawide band gap semiconductor material of Ga₂O₃ is introduced between fluorine-doped tin oxide and SnO₂ to regulate the interfacial charge dynamics by forming the Ga₂O₃/SnO₂ electron-transporting bilayer. Ga₂O₃ has an appropriate conduction band minimum which benefits the electron transport, and at the same time, it has a very deep valence band maximum which could be regarded as an effective blocking layer. Such an innovative structure triggers the advantages of a lower work function and a smoother surface of the electron-transporting bilayer which leads to a high-quality perovskite film. Furthermore, superior hole-blocking properties of the introduced Ga₂O₃ layer could effectively reduce the interfacial recombination. All the properties could help to improve the extracting and transporting ability of charge carriers synergistically. Finally, the efficiency and stability of PSCs are greatly enhanced. All results suggest that the performance of PSCs could be improved effectively by introducing the ultrawide band gap oxide semiconductor of Ga₂O₃.

更新日期：2020-12-09

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