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High-Performance Broadband Photodetector Based on Monolayer MoS2 Hybridized with Environment-Friendly CuInSe2 Quantum Dots
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2020-11-25 , DOI: 10.1021/acsami.0c14161 Tao Shen 1 , Feng Li 2 , Zhenyun Zhang 1 , Lei Xu 1 , Junjie Qi 1
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2020-11-25 , DOI: 10.1021/acsami.0c14161 Tao Shen 1 , Feng Li 2 , Zhenyun Zhang 1 , Lei Xu 1 , Junjie Qi 1
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Monolayer MoS2, a direct bandgap transition metal dichalcogenide (TMD), has attracted worldwide attention in electronics and optoelectronics. However, the performance of photodetectors based on monolayer MoS2 is restricted to a weak optical absorption, narrow absorption range, and persistent photoconductance. Herein, benefiting from an easy solution process, high light absorption coefficient, and wide absorption range, environment-friendly CuInSe2 quantum dots (QDs) are hybridized with monolayer MoS2 for high-performance broadband photodetectors. Owing to the favorable type-II energy band alignment of MoS2/CuInSe2-QDs, the hybrid photodetector exhibits a broadband photoresponse from the ultraviolet to near-infrared region, with an ultrahigh photoresponsivity of 74.8 A/W at 1064 nm, and compared with those of the pristine MoS2 device, the photoresponsivity and specific detectivity in the ultraviolet–visible region were enhanced by about 30 and 20 times, respectively. Furthermore, the formed depletion region at the MoS2/CuInSe2-QDs interface can significantly increase the photoresponse speed, and the accumulated holes in the QD side induce a strong photogating effect to improve the photoresponsive characteristics of the hybrid photodetector. Our work opens up opportunities for fabricating high-performance monolayer TMD-based broadband photodetectors.
中文翻译：
基于单层MoS 2与环境友好的CuInSe 2量子点杂交的高性能宽带光电探测器
单层MoS 2是一种直接的带隙过渡金属二硫化碳（TMD），在电子和光电子领域引起了全球关注。但是，基于单层MoS 2的光电探测器的性能仅限于弱的光吸收，窄的吸收范围和持久的光电导。在此，得益于简单的溶液处理，高的光吸收系数和宽的吸收范围，将环保型CuInSe 2量子点（QD）与单层MoS 2杂交以用于高性能宽带光电探测器。由于MoS 2 / CuInSe 2具有良好的II型能带取向-QDs，混合光电探测器表现出从紫外到近红外区域的宽带光响应，在1064 nm处具有74.8 A / W的超高光响应性，并且与原始MoS 2器件相比，其光响应性和比检测率更高。紫外线可见区域分别增加了约30倍和20倍。此外，在MoS 2 / CuInSe 2 -QDs界面处形成的耗尽区可以显着提高光响应速度，并且在QD侧累积的空穴会引起强烈的光门效应，从而改善混合光电探测器的光响应特性。我们的工作为制造高性能基于TMD的单层宽带光电探测器提供了机会。
更新日期：2020-12-09
中文翻译：
基于单层MoS 2与环境友好的CuInSe 2量子点杂交的高性能宽带光电探测器
单层MoS 2是一种直接的带隙过渡金属二硫化碳（TMD），在电子和光电子领域引起了全球关注。但是，基于单层MoS 2的光电探测器的性能仅限于弱的光吸收，窄的吸收范围和持久的光电导。在此，得益于简单的溶液处理，高的光吸收系数和宽的吸收范围，将环保型CuInSe 2量子点（QD）与单层MoS 2杂交以用于高性能宽带光电探测器。由于MoS 2 / CuInSe 2具有良好的II型能带取向-QDs，混合光电探测器表现出从紫外到近红外区域的宽带光响应，在1064 nm处具有74.8 A / W的超高光响应性，并且与原始MoS 2器件相比，其光响应性和比检测率更高。紫外线可见区域分别增加了约30倍和20倍。此外，在MoS 2 / CuInSe 2 -QDs界面处形成的耗尽区可以显着提高光响应速度，并且在QD侧累积的空穴会引起强烈的光门效应，从而改善混合光电探测器的光响应特性。我们的工作为制造高性能基于TMD的单层宽带光电探测器提供了机会。
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