在常压下轻松合成垂直排列的MoS2纳米片,Crystal Research and Technology

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在常压下轻松合成垂直排列的MoS2纳米片
Crystal Research and Technology ( IF 1.5 ) Pub Date : 2020-11-26 , DOI: 10.1002/crat.202000085
Chandra Kamal Borah ₁ , Sanjeev Kumar ₁

Affiliation

使用普通管式炉在850°C的温度和大气压条件下，将垂直排列的2D二硫化钼（MoS ₂）纳米片直接生长在SiO ₂ / Si衬底上。为了获得高质量的垂直排列的二维MoS ₂，要改变前体材料（即三氧化钼（MoO ₃）粉末和硫（S））的量，同时保持其他参数（例如温度和载气流速）恒定。拉曼光谱法证实了2D MoS ₂层的形成，并说明了生长的MoS ₂为几层形式且具有良好的结晶度。拉曼光谱确定了最佳质量的2D MoS ₂。通过原子力显微镜（AFM）和场效应扫描显微镜（FESEM）进行的MoS ₂的形貌和形态研究表明，合成后的MoS ₂是垂直排列的。进行X射线衍射和能量色散光谱（EDS）以确定产品中的相和元素。在当前的工作中，重点是垂直对齐而不是2D MoS ₂的厚度。最后，证明了在大气压力条件下，通过改变MoO ₃和S的量，可以使用简单的普通管式炉在SiO ₂ / Si衬底上简单地生长垂直取向的2D MoS ₂。

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Facile Synthesis of Vertically Aligned MoS2 Nanosheets at Ambient Pressure

Vertically aligned 2D molybdenum disulfide (MoS₂) nanosheets are grown directly on SiO₂/Si substrate using an ordinary tubular furnace under 850 °C temperature and atmospheric pressure condition. To achieve high‐quality vertically aligned 2D MoS₂, the amount of precursor material, i.e., molybdenum trioxide (MoO₃) powder and sulfur (S), is varied, keeping the other parameters such as temperature and carrier gas flow rate constant. The Raman spectroscopy confirms the formation of 2D MoS₂ layers and it illustrates that as‐grown MoS₂ is in few‐layer forms with good crystallinity. The Raman spectra identifies the best quality 2D MoS₂. The topographical and morphological studies of MoS₂ carried out by atomic force microscope (AFM) and field effect scanning microscope (FESEM) reveal that as‐synthesized MoS₂ is vertically aligned. X‐ray diffraction and energy dispersive spectroscopy (EDS) are carried out in order to identify the phase and elements in the product. In the present work, the emphasis is given on the vertical alignment rather than the thickness of 2D MoS₂. Finally, it is demonstrated that vertically aligned 2D MoS₂ can be grown simply on SiO₂/Si substrate using a simple ordinary tubular furnace under atmospheric pressure condition by varying the amount of MoO₃ and S.

更新日期：2021-01-07

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