One-dimensional (1D) CsPbI₃ nanorods (NRs) possess the suitable bandgap, extinction coefficient, long exciton diffusion radius and directed conductive channel, which make them advantageous for numerous optoelectronic devices. However, the direct synthesis of high-quality CsPbI₃ NRs remains a challenge. Here, we develop a direct and facile synthetic approach to prepare the CsPbI₃ NRs by YCl₃ promotion. The YCl₃ is not only the inducement of anisotropic growth of NCs, but also the source of passivator for improving the stability of NCs. Because of an effective YCl₃ passivation, the efficient red emitting CsPbI₃ NCs with photoluminescence quantum yield (PLQY) of 97% was achieved. More importantly, the YCl₃ promoted CsPbI₃ NRs with small aspect ratio of ~3.2 exhibit the PLQY of 84%, the highest value obtained from the red perovskite NRs. The fluorescence anisotropy of 0.184 mmol-YCl₃ promoted CsPbI₃ NRs is 0.38, and the rotational diffusion time ${\tau }_{\mathit{rot}}$ = 1000 ns. The analysis on fluorescence anisotropy of the CsPbI₃ perovskite NRs proves that the size in length and width is consistent with the result measured by TEM images of as-prepared perovskite NRs. Meanwhile, conductivities of the films made of 0.184 mmol-YCl₃ promoted CsPbI₃ NRs is 2.94 × 10⁻¹ S/cm, which is 17 times higher than 1.70 × 10⁻² S/cm of bare CsPbI₃ nanocubes. Furthermore, various CsPbI₃ NCs are employed to prepare light-emitting diodes (LEDs). The YCl₃ promoted CsPbI₃ NRs based LEDs display an optimum external quantum yield (EQE) of 10.5%, and luminance of 1672 cd/m². These results prove that the as-prepared YCl₃ promoted CsPbI₃ NRs have promising prospect in optoelectronic devices.

一维（1D）CsPbI ₃纳米棒（NRs）具有合适的带隙，消光系数，长激子扩散半径和定向导电通道，这使其在众多光电设备中均具有优势。但是，直接合成高质量的CsPbI ₃ NR仍然是一个挑战。在这里，我们开发了一种直接且简便的合成方法，可通过YCl ₃促进来制备CsPbI ₃ NR 。YCl ₃不仅是诱导NCs各向异性生长的诱因，而且是提高NCs稳定性的钝化剂来源。由于有效的YCl ₃钝化，有效的红色发光CsPbI ₃实现了NC的光致发光量子产率（PLQY）为97％。更重要的是，YCl ₃促进的CsPbI ₃ NR长径比约为3.2，其PLQY为84％，这是从红色钙钛矿NR获得的最高值。0.184 mmol-YCl ₃促进的CsPbI ₃ NRs的荧光各向异性为0.38，旋转扩散时间${\tau }_{\mathit{腐烂}}$ = 1000 ns。对CsPbI ₃钙钛矿NRs荧光各向异性的分析表明，长和宽的大小与所制备钙钛矿NRs的TEM图像测量结果一致。同时，由0.184 mmol-YCl ₃促进的CsPbI ₃ NRs制成的薄膜的电导率为2.94×10 ^-1 S / cm，是裸露的CsPbI ₃纳米立方体的1.70×10 ^-2 S / cm的17倍。此外，采用各种CsPbI ₃ NC来制备发光二极管（LED）。YCl ₃促进的基于CsPbI ₃ NRs的LED的最佳外部量子产率（EQE）为10.5％，亮度为1672 cd / m ²。这些结果证明，制备的YCl ₃促进的CsPbI ₃ NRs在光电子器件中具有广阔的前景。