Pulsed Gate Switching of MoS2 Field‐Effect Transistor Based on Flexible Polyimide Substrate for Ultrasonic Detectors,Advanced Functional Materials

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Pulsed Gate Switching of MoS2 Field‐Effect Transistor Based on Flexible Polyimide Substrate for Ultrasonic Detectors
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2020-11-17 , DOI: 10.1002/adfm.202007389
Muhammad Naqi ₁ , Bosung Kim ₁ , Sang‐Woo Kim ₁ , Sunkook Kim ₁

Affiliation

Molybdenum disulfide (MoS₂) semiconductors have closely been studied for potential applications in detectors, optoelectronics, and flexible electronics due to its high electrical and robust mechanical performance. Herein, the first experimental study of the high‐speed ultrasound wave detection by the combinational structure of flexible MoS₂ field‐effect transistor (FET) and piezoelectric device based on polyvinylidene fluoride trifluoro ethylene P(VDF‐TrFE) is reported. The proposed flexible MoS₂ based FET device exhibits maximum mobility of 18.12 cm² Vs⁻¹, high on/off current ratio of ≈10⁵, high robustness over mechanical tests, and excellent gate‐pulsed switching behavior at different frequencies (10, 100, and 500 kHz), thus, utilized as supporting electronics to detect ultrasound wave at high‐speed. The ultrasound waves are applied to the self‐assembled piezoelectric device under different power scales (0 ≈ 1.5 W cm⁻²) and the transfer curve of the proposed FET is analyzed. The results show a clear detection of ultrasound waves with high stability and excellent linearity in terms of threshold voltage (V_th) shift and drain current (I_ds) under different power levels. Also, the pulsed gate‐switching behavior is analyzed and the ultrasound detection with high stability is observed at high‐speed switching, thus, enabling the development of applications in high‐speed electronic devices and biomedical imaging tools.

中文翻译：

基于柔性聚酰亚胺衬底的超声检测器MoS2场效应晶体管的脉冲门开关

由于二硫化钼（MoS ₂）半导体具有高的电气性能和强大的机械性能，因此已经在检测器，光电子学和柔性电子学中的潜在应用进行了深入研究。本文首次报道了通过柔性MoS ₂场效应晶体管（FET）和基于聚偏二氟乙烯三氟乙烯P（VDF-TrFE）的压电器件的组合结构进行高速超声波检测的实验研究。所提出的灵活的MoS ₂的基于FET器件呈现18.12厘米的最大迁移² Vs的^-1开/，高折的≈10电流比⁵因此，在机械测试中具有很高的鲁棒性，并且在不同频率（10、100和500 kHz）下具有出色的门脉冲开关性能，因此被用作支持电子设备以高速检测超声波。将超声波以不同的功率标度（0≈1.5 W cm ^-2）施加到自组装压电器件上，并分析了所提出的FET的传输曲线。结果表明，在阈值电压（V _th）漂移和漏极电流（I _ds）方面，具有高稳定性和出色线性度的超声波的清晰检测）在不同的功率水平下。此外，还分析了脉冲门控开关行为，并在高速开关时观察到了具有高稳定性的超声波检测，从而促进了在高速电子设备和生物医学成像工具中的应用开发。

更新日期：2020-11-17

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