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Highly Conductive Nitrogen-Doped Vertically Oriented Graphene toward Versatile Electrode-Related Applications
ACS Nano ( IF 15.8 ) Pub Date : 2020-11-12 , DOI: 10.1021/acsnano.0c05662 Lingzhi Cui 1, 2 , Yahuan Huan 3, 4 , Junjie Shan 1, 2 , Bingyao Liu 5, 6 , Junling Liu 2 , Huanhuan Xie 1 , Fan Zhou 4, 5 , Peng Gao 6, 7 , Yanfeng Zhang 1, 2, 4 , Zhongfan Liu 1, 2, 8
ACS Nano ( IF 15.8 ) Pub Date : 2020-11-12 , DOI: 10.1021/acsnano.0c05662 Lingzhi Cui 1, 2 , Yahuan Huan 3, 4 , Junjie Shan 1, 2 , Bingyao Liu 5, 6 , Junling Liu 2 , Huanhuan Xie 1 , Fan Zhou 4, 5 , Peng Gao 6, 7 , Yanfeng Zhang 1, 2, 4 , Zhongfan Liu 1, 2, 8
Affiliation
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The direct growth of vertically oriented graphene (VG) on low-priced, easily accessible soda-lime glass can propel its applications in transparent electrodes and energy-relevant areas. However, graphene deposited at low temperature (∼600 °C) on the catalysis-free insulating substrates usually presents high defect density, poor crystalline quality, and unsatisfactory electrical conductivity. To tackle this issue, we select high borosilicate glass as the growth substrate (softening point ∼850 °C), which can resist higher growth temperature and thus afford higher graphene crystalline quality, by using a radio-frequency plasma-enhanced chemical vapor deposition (rf-PECVD) route. A nitrogen doping strategy is also combined to tailor the carrier concentration through a methane/acetonitrile-precursor-based synthetic strategy. The sheet resistance of as-grown nitrogen-doped (N-doped) VG films on high borosilicate glass can thus be lowered down to ∼2.3 kΩ·sq–1 at a transmittance of 88%, less than half of the methane-precursor-based PECVD product. Significantly, this synthetic route allows the achievement of 30-inch-scale uniform N-doped graphene glass, thus promoting its applications as excellent electrodes in high-performance switchable windows. Additionally, such N-doped VG films were also employed as efficient electrocatalysts for electrocatalytic hydrogen evolution reaction.
中文翻译：
高导电性，垂直方向掺杂氮的石墨烯在与电极相关的各种应用中的应用
垂直取向的石墨烯（VG）在低价，易于获得的钠钙玻璃上的直接生长可以推动其在透明电极和与能源相关的领域中的应用。但是，在低温（约600°C）下沉积在无催化绝缘基板上的石墨烯通常具有高缺陷密度，较差的结晶质量和不令人满意的导电性。为了解决这个问题，我们选择高硼硅玻璃作为生长衬底（软化点〜850°C），它可以通过使用射频等离子体增强化学气相沉积来抵抗更高的生长温度并因此提供更高的石墨烯晶体质量（ rf-PECVD）路线。还通过基于甲烷/乙腈前体的合成策略，结合了氮掺杂策略来调整载流子浓度。–1的透射率为88％，不到基于甲烷的前体PECVD产品的一半。值得注意的是，这种合成路线可实现30英寸规模的均匀掺杂N的石墨烯玻璃，从而促进其在高性能可开关窗户中作为出色电极的应用。另外，这种N掺杂的VG膜也被用作用于电催化放氢反应的有效电催化剂。
更新日期：2020-11-25
中文翻译：
高导电性，垂直方向掺杂氮的石墨烯在与电极相关的各种应用中的应用
垂直取向的石墨烯（VG）在低价，易于获得的钠钙玻璃上的直接生长可以推动其在透明电极和与能源相关的领域中的应用。但是，在低温（约600°C）下沉积在无催化绝缘基板上的石墨烯通常具有高缺陷密度，较差的结晶质量和不令人满意的导电性。为了解决这个问题，我们选择高硼硅玻璃作为生长衬底（软化点〜850°C），它可以通过使用射频等离子体增强化学气相沉积来抵抗更高的生长温度并因此提供更高的石墨烯晶体质量（ rf-PECVD）路线。还通过基于甲烷/乙腈前体的合成策略，结合了氮掺杂策略来调整载流子浓度。–1的透射率为88％，不到基于甲烷的前体PECVD产品的一半。值得注意的是，这种合成路线可实现30英寸规模的均匀掺杂N的石墨烯玻璃，从而促进其在高性能可开关窗户中作为出色电极的应用。另外，这种N掺杂的VG膜也被用作用于电催化放氢反应的有效电催化剂。
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