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High-Performance Thin-Film Transistors with an Atomic-Layer-Deposited Indium Gallium Oxide Channel: A Cation Combinatorial Approach
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2020-11-10 , DOI: 10.1021/acsami.0c16325 Hyun Ji Yang 1 , Hyeon Joo Seul 1 , Min Jae Kim 1 , Yerin Kim 2 , Hyun Cheol Cho 1 , Min Hoe Cho 1 , Yun Heub Song 1 , Hoichang Yang 2 , Jae Kyeong Jeong 1
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2020-11-10 , DOI: 10.1021/acsami.0c16325 Hyun Ji Yang 1 , Hyeon Joo Seul 1 , Min Jae Kim 1 , Yerin Kim 2 , Hyun Cheol Cho 1 , Min Hoe Cho 1 , Yun Heub Song 1 , Hoichang Yang 2 , Jae Kyeong Jeong 1
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The effect of gallium (Ga) concentration on the structural evolution of atomic-layer-deposited indium gallium oxide (IGO) (In1–xGaxO) films as high-mobility n-channel semiconducting layers was investigated. Different Ga concentrations in 10–13 nm thick In1–xGaxO films allowed versatile phase structures to be amorphous, highly ordered, and randomly oriented crystalline by thermal annealing at either 400 or 700 °C for 1 h. Heavy Ga concentrations above 34 atom % caused a phase transformation from a polycrystalline bixbyite to an amorphous IGO film at 400 °C, while proper Ga concentration produced a highly ordered bixbyite crystal structure at 700 °C. The resulting highly ordered In0.66Ga0.34O film show unexpectedly high carrier mobility (μFE) values of 60.7 ± 1.0 cm2 V–1 s–1, a threshold voltage (VTH) of −0.80 ± 0.05 V, and an ION/OFF ratio of 5.1 × 109 in field-effect transistors (FETs). In contrast, the FETs having polycrystalline In1–xGaxO films with higher In fractions (x = 0.18 and 0.25) showed reasonable μFE values of 40.3 ± 1.6 and 31.5 ± 2.4 cm2 V–1 s–1, VTH of −0.64 ± 0.40 and −0.43 ± 0.06 V, and ION/OFF ratios of 2.5 × 109 and 1.4 × 109, respectively. The resulting superior performance of the In0.66Ga0.34O-film-based FET was attributed to a morphology having fewer grain boundaries, with higher mass densification and lower oxygen vacancy defect density of the bixbyite crystallites. Also, the In0.66Ga0.34O transistor was found to show the most stable behavior against an external gate bias stress.
中文翻译：
具有原子层沉积铟镓氧化物通道的高性能薄膜晶体管：阳离子组合方法
研究了镓（Ga）浓度对原子层沉积的铟镓氧化物（IGO）（In 1- x Ga x O）薄膜作为高迁移率n通道半导体层的结构演变的影响。在10–13 nm厚的1- x Ga x O膜中，不同的Ga浓度可以通过在400或700°C的温度下进行1 h的热退火，使通用的相结构变为非晶态，高度有序且随机取向的晶体。高于34原子％的重Ga浓度在400°C时引起从多晶的方铁矿到非晶IGO膜的相变，而适当的Ga浓度在700°C时产生了高度有序的方铁矿晶体结构。结果在0.66中高度有序Ga 0.34 O膜显示出出乎意料的高载流子迁移率（μFE）值为60.7±1.0 cm 2 V –1 s –1，阈值电压（V TH）为-0.80±0.05 V，I ON / OFF比为5.1 ×10 9在场效应晶体管（FET）中。相反，具有多In分数（x = 0.18和0.25）的In 1- x Ga x O薄膜的FET显示合理的μFE值分别为40.3±1.6和31.5±2.4 cm 2 V –1 s –1，V TH分别为-0.64±0.40和-0.43±0.06 V，I ON / OFF比分别为2.5×10 9和1.4×10 9。基于In 0.66 Ga 0.34 O膜的FET所产生的优越性能归因于具有较少晶界的形态，具有更高的质量致密化和方铁矿微晶的氧空位缺陷密度。另外，发现In 0.66 Ga 0.34 O晶体管在抵抗外部栅极偏置应力方面表现出最稳定的性能。
更新日期：2020-11-25
中文翻译：
具有原子层沉积铟镓氧化物通道的高性能薄膜晶体管：阳离子组合方法
研究了镓（Ga）浓度对原子层沉积的铟镓氧化物（IGO）（In 1- x Ga x O）薄膜作为高迁移率n通道半导体层的结构演变的影响。在10–13 nm厚的1- x Ga x O膜中，不同的Ga浓度可以通过在400或700°C的温度下进行1 h的热退火，使通用的相结构变为非晶态，高度有序且随机取向的晶体。高于34原子％的重Ga浓度在400°C时引起从多晶的方铁矿到非晶IGO膜的相变，而适当的Ga浓度在700°C时产生了高度有序的方铁矿晶体结构。结果在0.66中高度有序Ga 0.34 O膜显示出出乎意料的高载流子迁移率（μFE）值为60.7±1.0 cm 2 V –1 s –1，阈值电压（V TH）为-0.80±0.05 V，I ON / OFF比为5.1 ×10 9在场效应晶体管（FET）中。相反，具有多In分数（x = 0.18和0.25）的In 1- x Ga x O薄膜的FET显示合理的μFE值分别为40.3±1.6和31.5±2.4 cm 2 V –1 s –1，V TH分别为-0.64±0.40和-0.43±0.06 V，I ON / OFF比分别为2.5×10 9和1.4×10 9。基于In 0.66 Ga 0.34 O膜的FET所产生的优越性能归因于具有较少晶界的形态，具有更高的质量致密化和方铁矿微晶的氧空位缺陷密度。另外，发现In 0.66 Ga 0.34 O晶体管在抵抗外部栅极偏置应力方面表现出最稳定的性能。
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