Abstract The effect of surface modification of In2O3 films by rhodium atoms deposited by electron beam sputtering on the XP spectra is considered. The surface coverage with rhodium ranged from 0 to 0.1 ML. It was shown that the main changes in the XP spectra occur in the Rh3d region and are caused by the dimensional effect of rhodium particles. With an increase in the surface coverage with rhodium, Rh particles grow from an atomically dispersed state to relatively large clusters. As the particle size increases, its electronic structure tends to approach the state corresponding to the bulk Rh. Such a process is accompanied by a decrease in BE Rh3d5/2 by 0.3–0.6 eV, which behaviour depends on the surface structure of the used In2O3 films.

中文翻译：

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Rh/In2O3 体系的 XPS 研究

摘要 考虑了电子束溅射沉积的铑原子对In2O3薄膜的表面改性对XP光谱的影响。铑的表面覆盖范围为 0 至 0.1 ML。结果表明，XP 光谱的主要变化发生在 Rh3d 区域，并且是由铑颗粒的尺寸效应引起的。随着铑表面覆盖率的增加，Rh 粒子从原子分散状态增长到相对较大的簇。随着粒径的增加，其电子结构趋向于接近与体相 Rh 相对应的状态。这一过程伴随着 BE Rh3d5/2 降低 0.3-0.6 eV，其行为取决于所用 In2O3 薄膜的表面结构。