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High-Responsivity Photodetector Based on a Suspended Monolayer Graphene/RbAg4I5 Composite Nanostructure
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2020-11-02 , DOI: 10.1021/acsami.0c17751 Qianqian Hu 1 , Pengfei Wang 2 , Jun Yin 3 , Yu Liu 2 , Bocheng Lv 1 , Jia-Lin Zhu 1 , Zhanmin Dong 1 , Wei Zhang 4 , Wanyun Ma 1 , Jialin Sun 1
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2020-11-02 , DOI: 10.1021/acsami.0c17751 Qianqian Hu 1 , Pengfei Wang 2 , Jun Yin 3 , Yu Liu 2 , Bocheng Lv 1 , Jia-Lin Zhu 1 , Zhanmin Dong 1 , Wei Zhang 4 , Wanyun Ma 1 , Jialin Sun 1
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Graphene has excellent electrical, optical, thermal, and mechanical properties that make it an ideal optoelectronic material. However, it still has some problems, such as a very low light absorption rate, which means it cannot meet the application requirements of high-performance optoelectronic devices. Here, we produce a high-responsivity photodetector based on a monolayer graphene/RbAg4I5 composite nanostructure. With the aid of poly(methyl methacrylate), we suspend the monolayer graphene on a hollow carving groove with a width of 100 μm. A RbAg4I5 film evaporated on the back of the graphene causes the composite nanostructure to generate a large photocurrent under periodic illumination. Experimental results show that the dissociation and recombination of ion–electron bound states (IEBSs) are responsible for the excellent photoresponse. The device has very high (>1 A W–1) responsivity in wide-band illumination wavelength from 375 nm to 808 nm, especially at 375 nm, where it shows a responsivity of up to ∼5000 A W–1. We designed the dimensions of the carving groove to allow the light spot to cover the entire groove, and we cut the graphene sheet to match the length of the carving groove. With the structural optimizations, the energy of light can be used more efficiently to dissociate the IEBSs, which greatly improves the photoresponse of optoelectronic devices based on the proposed monolayer graphene/RbAg4I5 composite nanostructure.
中文翻译：
基于悬浮单层石墨烯/ RbAg 4 I 5复合纳米结构的高响应光电探测器
石墨烯具有出色的电，光，热和机械性能，使其成为理想的光电材料。但是，它仍然存在一些问题，例如非常低的光吸收率，这意味着它不能满足高性能光电器件的应用要求。在这里，我们生产基于单层石墨烯/ RbAg 4 I 5复合纳米结构的高响应光电探测器。借助于聚甲基丙烯酸甲酯，我们将单层石墨烯悬浮在宽度为100μm的空心雕刻凹槽上。RbAg 4 I 5在石墨烯背面蒸发的薄膜导致复合纳米结构在周期性照射下产生大的光电流。实验结果表明，离子-电子键合态（IEBS）的解离和重组是造成出色的光响应的原因。该器件在375 nm至808 nm的宽带照明波长下具有很高的响应度（> 1 AW –1），特别是在375 nm处，其响应度高达〜5000 AW –1。我们设计了雕刻凹槽的尺寸，以使光斑可以覆盖整个凹槽，然后切割石墨烯片以使其与雕刻凹槽的长度相匹配。通过结构优化，可以更有效地利用光能解离IEBS，从而大大改善了基于提出的单层石墨烯/ RbAg 4 I 5复合纳米结构的光电器件的光响应。
更新日期：2020-11-12
中文翻译：
基于悬浮单层石墨烯/ RbAg 4 I 5复合纳米结构的高响应光电探测器
石墨烯具有出色的电，光，热和机械性能，使其成为理想的光电材料。但是，它仍然存在一些问题，例如非常低的光吸收率，这意味着它不能满足高性能光电器件的应用要求。在这里，我们生产基于单层石墨烯/ RbAg 4 I 5复合纳米结构的高响应光电探测器。借助于聚甲基丙烯酸甲酯，我们将单层石墨烯悬浮在宽度为100μm的空心雕刻凹槽上。RbAg 4 I 5在石墨烯背面蒸发的薄膜导致复合纳米结构在周期性照射下产生大的光电流。实验结果表明，离子-电子键合态（IEBS）的解离和重组是造成出色的光响应的原因。该器件在375 nm至808 nm的宽带照明波长下具有很高的响应度（> 1 AW –1），特别是在375 nm处，其响应度高达〜5000 AW –1。我们设计了雕刻凹槽的尺寸，以使光斑可以覆盖整个凹槽，然后切割石墨烯片以使其与雕刻凹槽的长度相匹配。通过结构优化，可以更有效地利用光能解离IEBS，从而大大改善了基于提出的单层石墨烯/ RbAg 4 I 5复合纳米结构的光电器件的光响应。
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