ABSTRACT Indium sulfide thin films consisting of In2S3 and In6S7 phases were synthesized onto microscope glass substrates with different nanoparticle size using the chemical bath deposition method (CBD). Immediately after obtaining the films, they were annealed at 400°C for 1 h in reduced media in order to get better crystallization. The effect of nanoparticle sizes on the structural, compositional, optical, and electrical properties of the films was investigated. The films were characterized by x-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive x-ray spectrometry (EDS), UV-Vis spectroscopy and sheet resistivity measurements. The XRD spectra revealed the existence of both the cubic In2S3 and monoclinic In6S3 phases. From the SEM micrographs, the deposited films showed dense and good coverage of the surface with cracks. Moreover, nanoparticle sizes increased from 53 nm to 142 nm with increasing deposition time as well as film thickness. With an increase in nanoparticle size, the S/In ratio in the films decreased from 1.74 to 1.21 showing sulfur deficiency in the deposited films. The direct band gap ( E g ) of the films decreased from 3.35 eV to 2.70 eV with increasing nanoparticle size. The sheet resistivity of the films decreased from 1.69 × 107 Ω /Sq to 4.61 × 103 Ω /Sq. The obtained results demonstrate that nanoparticle sizes effected the structural, compositional, optical and sheet resistivity of the films.

中文翻译：

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纳米颗粒尺寸对由 In2S3 和 In6S7 相组成的硫化铟薄膜结构、光学和电学性能的影响

摘要 由 In2S3 和 In6S7 相组成的硫化铟薄膜使用化学浴沉积法 (CBD) 合成到具有不同纳米颗粒尺寸的显微镜玻璃基板上。获得薄膜后，立即在还原介质中在 400°C 下退火 1 小时以获得更好的结晶。研究了纳米颗粒尺寸对薄膜结构、组成、光学和电学性能的影响。通过 X 射线衍射 (XRD)、扫描电子显微镜 (SEM)、能量色散 X 射线光谱法 (EDS)、UV-Vis 光谱法和薄层电阻率测量对薄膜进行表征。XRD 谱揭示了立方 In2S3 和单斜 In6S3 相的存在。从 SEM 显微照片来看，沉积的薄膜显示出致密且良好的裂纹覆盖表面。此外，随着沉积时间和薄膜厚度的增加，纳米颗粒尺寸从 53 nm 增加到 142 nm。随着纳米颗粒尺寸的增加，薄膜中的 S/In 比从 1.74 下降到 1.21，表明沉积薄膜中缺乏硫。随着纳米颗粒尺寸的增加，薄膜的直接带隙 (E g ) 从 3.35 eV 降低到 2.70 eV。薄膜的薄层电阻率从 1.69 × 107 Ω /Sq 下降到 4.61 × 103 Ω /Sq。获得的结果表明纳米颗粒尺寸影响薄膜的结构、组成、光学和薄层电阻率。图21显示了沉积膜中的硫缺乏。随着纳米颗粒尺寸的增加，薄膜的直接带隙 (E g ) 从 3.35 eV 降低到 2.70 eV。薄膜的薄层电阻率从 1.69 × 107 Ω /Sq 下降到 4.61 × 103 Ω /Sq。获得的结果表明纳米颗粒尺寸影响薄膜的结构、组成、光学和薄层电阻率。图21显示了沉积膜中的硫缺乏。随着纳米颗粒尺寸的增加，薄膜的直接带隙 (E g ) 从 3.35 eV 降低到 2.70 eV。薄膜的薄层电阻率从 1.69 × 107 Ω /Sq 下降到 4.61 × 103 Ω /Sq。获得的结果表明纳米颗粒尺寸影响薄膜的结构、组成、光学和薄层电阻率。