Our official English website, www.x-mol.net, welcomes your
feedback! (Note: you will need to create a separate account there.)
Influence of Oxygen on Sputtered Titanium‐Doped Indium Oxide Thin Films and Their Application in Silicon Heterojunction Solar Cells
Solar RRL ( IF 6.0 ) Pub Date : 2020-10-27 , DOI: 10.1002/solr.202000501 Zhirong Yao 1, 2 , Weiyuan Duan 1 , Paul Steuter 1 , Jürgen Hüpkes 1 , Andreas Lambertz 1 , Karsten Bittkau 1 , Manuel Pomaska 1 , Depeng Qiu 1 , Kaifu Qiu 1, 2 , Zhuopeng Wu 1 , Hui Shen 2, 3 , Uwe Rau 1 , Kaining Ding 1
Solar RRL ( IF 6.0 ) Pub Date : 2020-10-27 , DOI: 10.1002/solr.202000501 Zhirong Yao 1, 2 , Weiyuan Duan 1 , Paul Steuter 1 , Jürgen Hüpkes 1 , Andreas Lambertz 1 , Karsten Bittkau 1 , Manuel Pomaska 1 , Depeng Qiu 1 , Kaifu Qiu 1, 2 , Zhuopeng Wu 1 , Hui Shen 2, 3 , Uwe Rau 1 , Kaining Ding 1
Affiliation
|
One of the challenges in fabricating high‐performance n‐type silicon heterojunction (SHJ) solar cells is developing a high‐quality transparent conductive oxide (TCO) electrode. Herein, the development and application of low‐temperature sputtered titanium‐doped indium oxide (ITiO) in n‐type, rear junction SHJ solar cells as a function of the oxygen flow ratio is presented. The microstructure, morphology, and optoelectronic properties are analyzed. The grain size of ITiO thin films decreases rapidly as the oxygen flow ratio is increased. Compared with an indium tin oxide (ITO) thin film, ITiO shows a superior balance in achieving excellent optoelectronic properties by reducing film resistivity but maintaining weak absorption. Higher fill factor is obtained by substituting ITiO for ITO as the front electrode in SHJ solar cells, which is mainly due to the improved carrier transport. Resistivity contributions of front‐side vertical and lateral carrier transport are disclosed by Quokka3 simulation. A champion cell efficiency of 23.81% with ITiO is achieved, which is so far the highest efficiency among the application of ITiO in SHJ solar cells to the best of our knowledge. The study demonstrates that ITiO is a promising TCO candidate for SHJ solar cells.
中文翻译：
氧对溅射钛掺杂的氧化铟薄膜的影响及其在硅异质结太阳能电池中的应用
制造高性能n型硅异质结（SHJ）太阳能电池的挑战之一是开发高质量的透明导电氧化物（TCO）电极。本文介绍了低温溅射钛掺杂的氧化铟（ITiO）在n型背结SHJ太阳能电池中作为氧气流量比的函数的开发和应用。分析了微观结构，形态和光电性能。随着氧气流量的增加，ITiO薄膜的晶粒尺寸迅速减小。与氧化铟锡（ITO）薄膜相比，ITI在降低薄膜电阻率但保持弱吸收的同时，在实现出色的光电性能方面显示出了出色的平衡。在SHJ太阳能电池中，用ITiO代替ITO作为前电极可以获得更高的填充系数，这主要是由于改进了运输工具。Quokka3模拟揭示了正面垂直和横向载流子传输的电阻率贡献。使用ITiO可以达到23.81％的最佳电池效率，据我们所知，这是迄今为止将ITiO应用于SHJ太阳能电池的最高效率。该研究表明ITiO是SHJ太阳能电池的有希望的TCO候选材料。
更新日期：2020-10-27
中文翻译：
氧对溅射钛掺杂的氧化铟薄膜的影响及其在硅异质结太阳能电池中的应用
制造高性能n型硅异质结（SHJ）太阳能电池的挑战之一是开发高质量的透明导电氧化物（TCO）电极。本文介绍了低温溅射钛掺杂的氧化铟（ITiO）在n型背结SHJ太阳能电池中作为氧气流量比的函数的开发和应用。分析了微观结构，形态和光电性能。随着氧气流量的增加，ITiO薄膜的晶粒尺寸迅速减小。与氧化铟锡（ITO）薄膜相比，ITI在降低薄膜电阻率但保持弱吸收的同时，在实现出色的光电性能方面显示出了出色的平衡。在SHJ太阳能电池中，用ITiO代替ITO作为前电极可以获得更高的填充系数，这主要是由于改进了运输工具。Quokka3模拟揭示了正面垂直和横向载流子传输的电阻率贡献。使用ITiO可以达到23.81％的最佳电池效率，据我们所知，这是迄今为止将ITiO应用于SHJ太阳能电池的最高效率。该研究表明ITiO是SHJ太阳能电池的有希望的TCO候选材料。
京公网安备 11010802027423号