Enhancing the performance of the room temperature gas sensing that based on a wide surface area of the metal oxide semiconductor is the most important field. In this paper, tin dioxide has been successfully prepared and deposited on the photoelectrochemical etched n-type silicon substrate by spray pyrolysis technique at different deposition temperatures. The constructional, morphological, and topographical properties have been inspected. The XRD patterns showed a broadening peak with a preferential one in the direction (110) having a tiny crystalline size and a huge surface area. The SEM and atomic force microscope displayed semi-spherical microstructures and nanostructures aggregated on the wall of the pores, and the others cover some pores; also, the surface was very rough and has small grains. Sensing characteristics depicted an ultra-response toward ammonia gas at the room temperature with the value of (175%) and quick response and recovery times at the deposition temperature of 350°C. The porous silicon substrate was the ideal way for SnO₂ nanoparticles to increase the gas response toward ammonia gas molecules in the humid air.

最重要的领域是提高基于金属氧化物半导体的大表面积的室温气体感测的性能。本文成功地制备了二氧化锡，并通过喷雾热解技术在不同的沉积温度下将其沉积在光化学刻蚀的n型硅衬底上。已经检查了结构，形态和地形特性。XRD图谱显示出在一个较小的晶体尺寸和巨大的表面积的方向（110）上具有优先峰的加宽峰。扫描电镜和原子力显微镜显示了聚集在孔壁上的半球形微结构和纳米结构，其他覆盖了一些孔。另外，表面非常粗糙并且具有小晶粒。传感特性描述了在室温下对氨气的超响应（值为175％）以及在350°C的沉积温度下的快速响应和恢复时间。多孔硅衬底是SnO的理想方法_2个纳米颗粒，可增加对潮湿空气中氨气分子的气体响应。