<br>使用金属辅助化学蚀刻大规模合成高度均匀的硅纳米线阵列,Chemistry of Materials

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使用金属辅助化学蚀刻大规模合成高度均匀的硅纳米线阵列
Chemistry of Materials ( IF 7.2 ) Pub Date : 2020-10-26 , DOI: 10.1021/acs.chemmater.0c03593
Fedja J Wendisch ₁ , Marcel Rey ₂ , Nicolas Vogel ₂ , Gilles R Bourret ₁

Affiliation

金属辅助化学蚀刻 (MACE) 与胶体光刻的结合已成为一种简单且经济高效的纳米结构硅方法。它在使用催化金属网合成硅微米线和纳米线阵列方面特别有效，催化金属网在蚀刻过程中会沉入硅基板中。该方法提供了对阵列几何形状的精确控制，而不需要昂贵的纳米图案技术。尽管 MACE 是一种基于高通量解决方案的方法，但由于当实验参数设置不当时金属催化剂不稳定，实现大规模均质性可能具有挑战性。这种不稳定性会导致金属膜破裂，严重损坏基板，从而损害纳米线阵列的质量。在这里，我们报告了影响金属催化剂层稳定性以实现大规模均质 MACE 的关键参数：蚀刻剂成分、金属膜厚度、粘附层厚度、纳米线直径和间距、金属膜覆盖率、Si/Au/蚀刻剂界面长度和胶体模板的结晶质量（晶粒尺寸和缺陷）。我们的结果调查了催化剂膜断裂的根源，并揭示了应通过将蚀刻速率保持在一定阈值以下来针对每种硅线阵列几何形状优化 MACE 实验。我们表明，Si/Au/蚀刻剂界面长度也会影响蚀刻速率，因此在优化 MACE 实验参数时应予以考虑。最后，我们的结果表明，具有小粒径的胶体模板（即，<100 id=159>2）可能会在图案转移过程中产生严重问题，因为晶界处的缺陷密度很高，这会对金属膜的稳定性产生负面影响。因此，这项工作为通过MACE 大规模合成硅微米和纳米线阵列提供了指导，对于从事 MACE 工作的新手和经验丰富的研究人员都相关。

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Large-Scale Synthesis of Highly Uniform Silicon Nanowire Arrays Using Metal-Assisted Chemical Etching

The combination of metal-assisted chemical etching (MACE) with colloidal lithography has emerged as a simple and cost-effective approach to nanostructure silicon. It is especially efficient at synthesizing Si micro- and nanowire arrays using a catalytic metal mesh, which sinks into the silicon substrate during the etching process. The approach provides a precise control over the array geometry, without requiring expensive nanopatterning techniques. Although MACE is a high-throughput solution-based approach, achieving large-scale homogeneity can be challenging because of the instability of the metal catalyst when the experimental parameters are not set appropriately. Such instabilities can lead to metal film fracture, significantly damaging the substrate and thus compromising the nanowire array quality. Here, we report on the critical parameters that influence the stability of the metal catalyst layer for achieving large-scale homogeneous MACE: etchant composition, metal film thickness, adhesion layer thickness, nanowire diameter and pitch, metal film coverage, Si/Au/etchant interface length, and crystalline quality of the colloidal template (grain size and defects). Our results investigate the origin of the catalyst film fracture and reveal that MACE experiments should be optimized for each Si wire array geometry by keeping the etch rate below a certain threshold. We show that the Si/Au/etchant interface length also affects the etch rate and should thus be considered when optimizing the MACE experimental parameters. Finally, our results demonstrate that colloidal templates with small grain sizes (i.e., <100 μm²) can yield significant problems during the pattern transfer because of a high density of defects at the grain boundaries that negatively affects the metal film stability. As such, this work provides guidelines for the large-scale synthesis of Si micro- and nanowire arrays via MACE, relevant for both new and experienced researchers working with MACE.

更新日期：2020-11-12

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