Laser-induced phenylation reaction to prepare semiconducting single-walled carbon nanotube arrays,Chemical Communications

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Laser-induced phenylation reaction to prepare semiconducting single-walled carbon nanotube arrays
Chemical Communications ( IF 4.3 ) Pub Date : 2020-10-19 , DOI: 10.1039/d0cc06095j
Ying Wang _{1,

2,

3,

4,

5} , Jiacheng Wang _{1,

2,

3,

4,

5} , Chao Ding _{1,

2,

3,

4,

5} , Hongjie Zhang _{1,

2,

3,

4,

5} , Ran Du _{6,

7,

8} , Shuchen Zhang _{9,

10,

11,

12} , Jinjie Qian _{1,

2,

3,

4,

5} , Yue Hu _{1,

2,

3,

4,

5} , Shaoming Huang _{1,

2,

3,

4,

5}

Affiliation

Single-walled carbon nanotube (SWNT) arrays are the key to making integrated circuits smaller than 10 nanometers. Herein, a brand-new approach is proposed to efficiently prepare semiconducting (s-) SWNT arrays by implementing a simple phenylation to modulate the metallic SWNT bandgap through the radical reaction between SWNTs and benzoyl peroxide molecules. Electrical measurement indicates that the percentage of s-SWNTs in the functionalized arrays could be higher than 97.8% after phenylation, promoting its exceptional performance as a field-effect transistor with an on–off ratio of 11 300. Our work paves a new avenue for the design and synthesis of high-purity s-SWNT arrays, which are highly important for future applications in carbon-based nano-electronic devices.

中文翻译：

激光诱导的苯基化反应制备半导体单壁碳纳米管阵列

单壁碳纳米管（SWNT）阵列是使集成电路小于10纳米的关键。本文中，提出了一种全新的方法，通过实施简单的苯基化来通过SWNT和过氧化苯甲酰分子之间的自由基反应来调节金属SWNT带隙，从而有效地制备半导体（s-）SWNT阵列。电学测量表明，苯基化后，功能化阵列中s - SWNT的百分比可能高于97.8％，从而提高了其作为场效应晶体管的出色性能，其开/关比为11300。我们的工作为高纯度s-SWNT阵列的设计和合成，这对于未来在碳基纳米电子设备中的应用非常重要。

更新日期：2020-11-03

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