Identifying Native Point Defects in the Topological Insulator Bi2Te3,ACS Nano

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Identifying Native Point Defects in the Topological Insulator Bi2Te3
ACS Nano ( IF 15.8 ) Pub Date : 2020-10-16 , DOI: 10.1021/acsnano.0c04861
Asteriona-Maria Netsou ₁ , Dmitry A. Muzychenko ₂ , Heleen Dausy ₁ , Taishi Chen ₃ , Fengqi Song ₄ , Koen Schouteden ₅ , Margriet J. Van Bael ₁ , Chris Van Haesendonck ₁

Affiliation

We successfully identified native point defects that occur in Bi₂Te₃ crystals by combining high-resolution bias-dependent scanning tunneling microscopy and density functional theory based calculations. As-grown Bi₂Te₃ crystals contain vacancies, antisites, and interstitial defects that may result in bulk conductivity and therefore may change the insulating bulk character. Here, we demonstrate the interplay between the growth conditions and the density of different types of native near-surface defects. In particular, scanning tunneling spectroscopy reveals the dependence on not only the local atomic environment but also on the growth kinetics and the resulting sample doping from n-type toward intrinsic crystals with the Fermi level positioned inside the energy gap. Our results establish a bias-dependent STM signature of the Bi₂Te₃ native defects and shed light on the link between the native defects and the electronic properties of Bi₂Te₃, which is relevant for the synthesis of topological insulator materials and the related functional properties.

中文翻译：

识别拓扑绝缘体Bi ₂ Te ₃中的本机点缺陷

通过结合高分辨率偏倚扫描隧道显微镜和基于密度泛函理论的计算，我们成功地确定了Bi ₂ Te ₃晶体中发生的自然点缺陷。Bi ₂ Te ₃生长的晶体中含有空位，反位点和间隙缺陷，这些缺陷可能会导致整体导电性，因此可能会改变绝缘体的特性。在这里，我们证明了生长条件和不同类型的天然近表面缺陷的密度之间的相互作用。尤其是，扫描隧道光谱学不仅揭示了对局部原子环境的依赖性，还揭示了对生长动力学的依赖，以及由此产生的样品从n型向本征晶体掺杂，费米能级位于能隙内。我们的研究结果建立铋的偏压相关STM签名₂碲₃本征缺陷和本征缺陷和Bi的电子性质之间的链路上的光棚₂碲₃，这与拓扑绝缘体材料的合成及其相关的功能特性有关。

更新日期：2020-10-28

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