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Interfacial Polarons in van der Waals Heterojunction of Monolayer SnSe2 on SrTiO3 (001)
Nano Letters ( IF 9.6 ) Pub Date : 2020-10-12 , DOI: 10.1021/acs.nanolett.0c02741 Yahui Mao 1 , Xiaochuan Ma 1 , Daoxiong Wu 2 , Chen Lin 1 , Huan Shan 1 , Xiaojun Wu 1, 2 , Jin Zhao 1, 3 , Aidi Zhao 1, 4 , Bing Wang 1
Nano Letters ( IF 9.6 ) Pub Date : 2020-10-12 , DOI: 10.1021/acs.nanolett.0c02741 Yahui Mao 1 , Xiaochuan Ma 1 , Daoxiong Wu 2 , Chen Lin 1 , Huan Shan 1 , Xiaojun Wu 1, 2 , Jin Zhao 1, 3 , Aidi Zhao 1, 4 , Bing Wang 1
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Interfacial polarons have been demonstrated to play important roles in heterostructures containing polar substrates. However, most of polarons found so far are diffusive large polarons; the discovery and investigation of small polarons at interfaces are scarce. Herein, we report the emergence of interfacial polarons in monolayer SnSe2 epitaxially grown on Nb-doped SrTiO3 (STO) surface using angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy (STM). ARPES spectra taken on this heterointerface reveal a nearly flat in-gap band correlated with a significant charge modulation in real space as observed with STM. An interfacial polaronic model is proposed to ascribe this in-gap band to the formation of self-trapped small polarons induced by charge accumulation and electron–phonon coupling at the van der Waals interface of SnSe2 and STO. Such a mechanism to form interfacial polaron is expected to generally exist in similar van der Waals heterojunctions consisting of layered 2D materials and polar substrates.
中文翻译：
SrTiO 3（001）上单层SnSe 2的范德华异质结中的界面极化子
已经证明界面极化子在含有极性底物的异质结构中起重要作用。然而，到目前为止发现的大多数极化子都是扩散的大极化子。界面上小的极化子的发现和研究很少。在此，我们报道了在掺Nb的SrTiO 3上外延生长的单层SnSe 2中界面极化子的出现（STO）表面使用角度分辨光发射光谱（ARPES）和扫描隧道显微镜（STM）。在该异质界面上拍摄的ARPES光谱显示，近乎平坦的能带隙与STM中观察到的真实空间中的显着电荷调制相关。提出了一个界面极化子模型，以将该间隙带归因于在SnSe 2和STO的范德华界面处的电荷积累和电子-声子耦合引起的自陷小极化子的形成。预期这种形成界面极化子的机制通常存在于由分层2D材料和极性基底组成的相似范德华异质结中。
更新日期：2020-11-12
中文翻译：
SrTiO 3（001）上单层SnSe 2的范德华异质结中的界面极化子
已经证明界面极化子在含有极性底物的异质结构中起重要作用。然而，到目前为止发现的大多数极化子都是扩散的大极化子。界面上小的极化子的发现和研究很少。在此，我们报道了在掺Nb的SrTiO 3上外延生长的单层SnSe 2中界面极化子的出现（STO）表面使用角度分辨光发射光谱（ARPES）和扫描隧道显微镜（STM）。在该异质界面上拍摄的ARPES光谱显示，近乎平坦的能带隙与STM中观察到的真实空间中的显着电荷调制相关。提出了一个界面极化子模型，以将该间隙带归因于在SnSe 2和STO的范德华界面处的电荷积累和电子-声子耦合引起的自陷小极化子的形成。预期这种形成界面极化子的机制通常存在于由分层2D材料和极性基底组成的相似范德华异质结中。
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