Unprecedented Uniform 3D Growth Integration of 10-Layer Stacked Si Nanowires on Tightly Confined Sidewall Grooves,Nano Letters

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Unprecedented Uniform 3D Growth Integration of 10-Layer Stacked Si Nanowires on Tightly Confined Sidewall Grooves
Nano Letters ( IF 9.6 ) Pub Date : 2020-09-24 , DOI: 10.1021/acs.nanolett.0c02950
Ruijin Hu ₁ , Shun Xu ₁ , Junzhuan Wang ₁ , Yi Shi ₁ , Jun Xu ₁ , Kunji Chen ₁ , Linwei Yu ₁

Affiliation

Bottom-up catalytic growth offers a high-yield, versatile, and powerful tool for the construction of versatile 3D nanocomplexes, while the major challenge is to achieve a precise location and uniformity control, as guaranteed by top-down lithography. Here, an unprecedented uniform and reliable growth integration of 10-layer stacked Si nanowires (SiNWs) has been accomplished, for the very first time, via a new groove-confined and tailored catalyst formation and guided growth upon the truncated sidewall of SiO₂/SiN_x multilayers. The SiNW array accomplishes a narrow diameter of D_nw = 28 ± 2.4 nm, NW-to-NW spacing of t_sp = 40 nm, and extremely stable growth over L_nw > 50 μm and bending locations, which can compete with or even outperform the state-of-the-art top-down lithography and etching approaches, in terms of stacking number, channel uniformity at different levels, fabrication cost, and efficiency. These results provide a solid basis to establish a new 3D integration approach to batch-manufacture various advanced electronic and sensor applications.

中文翻译：

10层堆叠式Si纳米线在密闭侧壁沟槽上的前所未有的均匀3D生长集成

自下而上的催化生长为构建通用的3D纳米复合物提供了高产量，多功能且功能强大的工具，而主要挑战是实现精确的位置和均匀性控制，这是自上而下的光刻技术所保证的。在这里，通过新的沟槽限制和定制的催化剂形成以及在SiO ₂ /的截短侧壁上引导生长，这是第一次实现了10层堆叠式Si纳米线（SiNWs）前所未有的均匀和可靠的生长集成。SiN _x多层。SiNW阵列实现了D _nw = 28±2.4 nm的窄直径，t _sp = 40 nm的NW到NW间距以及在L _nw上极其稳定的生长> 50μm和弯曲位置，可以在堆叠数量，不同级别的通道均匀性，制造成本和效率方面与现有的自上而下的光刻和蚀刻方法竞争甚至胜过最新技术。这些结果为建立新的3D集成方法以批量制造各种高级电子和传感器应用程序提供了坚实的基础。

更新日期：2020-10-15

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