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Oxygen-Doped VS4 Microspheres with Abundant Sulfur Vacancies as a Superior Electrocatalyst for the Hydrogen Evolution Reaction
ACS Sustainable Chemistry & Engineering ( IF 7.1 ) Pub Date : 2020-09-24 , DOI: 10.1021/acssuschemeng.0c06337
Jun Xu 1 , Bansui Yu 1 , Han Zhao 1 , Shoufu Cao 2 , Lingling Song 1 , Kun Xing 1 , Ru Zhou 3 , Xiaoqing Lu 2
Affiliation  

In this work, one-dimensional chainlike structured vanadium tetrasulfide (VS4) with rich defects has been demonstrated as an advanced electrocatalyst for an efficient hydrogen evolution reaction (HER). The VS4 microspheres featuring oxygen doping and abundant sulfur vacancies are synthesized by a simple solution method. The O-doping and S-vacancy offer the VS4 with a dramatically narrowed band gap and an improved intrinsic electronic conductivity, benefitting for fast charge transport during the HER process. Furthermore, the rich defects of sulfur vacancies and oxygen heteroatoms provide more active sites with high activity for catalyzing protons to hydrogen reaction. Owing to the synergistic effects of defect engineering and electronic benefits, the VS4 microspheres serve as a superior HER catalyst surpassing the 1T-VS2 microflowers with a layered structure. The VS4 microsphere catalyst exhibits prominent kinetic metrics of a low onset potential of 15 mV, a low overpotential of 48 mV at 10 mA cm–2, a small Tafel slope of 44 mV dec–1, and a stable long-term operation of 75 h. This work paves a new pathway to improve the electrocatalytic activity of HER catalysts by synergistically modulating their defects and electronic structures.

中文翻译:

带有大量硫空位的掺氧VS 4微球作为产氢反应的优良电催化剂

在这项工作中,具有丰富缺陷的一维链状结构的四硫化钒(VS 4)已被证明是用于有效氢释放反应(HER)的先进电催化剂。通过简单的溶液法合成了具有氧掺杂和大量硫空位的VS 4微球。O掺杂和S空位为VS 4提供了明显缩小的带隙和改善的固有电子电导率,从而有利于HER过程中的快速电荷传输。此外,硫空位和氧杂原子的丰富缺陷提供了更多的具有高活性的活性位点,以催化质子发生氢反应。由于缺陷工程和电子利益的协同作用,VS4个微球可作为高级HER催化剂,超过具有分层结构的1T-VS 2个微花。VS 4微球催化剂表现出杰出的动力学指标,其起始电势低至15 mV,在10 mA cm –2时低过电势48 mV,Tafel斜率小至dec –1 44 mV ,并且长期稳定运行。 75小时 这项工作通过协同调节缺陷和电子结构,为提高HER催化剂的电催化活性开辟了一条新途径。
更新日期:2020-10-05
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