在 CH3COOH/Ar 气体混合物中电感耦合等离子体反应离子蚀刻 CoFeB 磁性薄膜,Vacuum

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在 CH3COOH/Ar 气体混合物中电感耦合等离子体反应离子蚀刻 CoFeB 磁性薄膜
Vacuum ( IF 3.8 ) Pub Date : 2015-09-01 , DOI: 10.1016/j.vacuum.2015.05.018
Adrian Adalberto Garay , Su Min Hwang , Ji Hyun Choi , Byoung Chul Min , Chee Won Chung

摘要在 CH3COOH/Ar 气体混合物中使用电感耦合等离子体反应离子蚀刻研究了 TiN 硬掩模图案化 CoFeB 薄膜的蚀刻特性。CoFeB 磁性薄膜和 TiN 硬掩模的蚀刻特性作为气体混合物浓度、线圈射频功率、直流偏置电压和气压的函数进行了研究。随着 CH3COOH/Ar 气体混合物中 CH3COOH 浓度的增加，CoFeB 薄膜的蚀刻速率和蚀刻轮廓中的各向异性程度降低，而线圈射频功率和直流偏置电压的增加以及气压的降低提高了蚀刻速率并改善了蚀刻轮廓。此外，在 100 V 的直流偏置电压下，薄膜表面形成了厚的烃层。对不同 CH3COOH 浓度下蚀刻薄膜的 X 射线光电子能谱和光发射光谱分析表明，在 CH3COOH/Ar 气体混合物中蚀刻的 CoFeB 薄膜遵循物理溅射蚀刻机制，通过薄膜氧化和保护性抑制层的形成在薄膜表面。当在高溅射条件下进行时，蚀刻具有高度各向异性的 TiN 图案化 CoFeB 薄膜时不会再沉积或蚀刻残留物。

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Inductively coupled plasma reactive ion etching of CoFeB magnetic thin films in a CH3COOH/Ar gas mixture

Abstract The etch characteristics of TiN hard mask patterned CoFeB thin films were investigated using an inductively coupled plasma reactive ion etching in a CH3COOH/Ar gas mixture. The etch characteristics of CoFeB magnetic thin film and TiN hard masks were investigated as a function of gas mixture concentration, coil rf power, dc-bias voltage and gas pressure. As CH3COOH concentration in the CH3COOH/Ar gas mixture increased, the etch rates of CoFeB films and degree of anisotropy in the etch profile decreased, while increased coil rf-power and dc bias voltage and reduced gas pressure increased the etch rate and improved the etch profile. Additionally, a thick hydrocarbon layer was formed on the film surface at a dc-bias voltage of 100 V. X-ray photoelectron spectroscopy and optical emission spectroscopy analyses of the etched films at various CH3COOH concentrations suggest that CoFeB thin films etched in a CH3COOH/Ar gas mixture follow a physical sputtering etch mechanism assisted by oxidation of the film and formation of a protective inhibition layer on the film surface. Etching of TiN patterned CoFeB films with a high degree of anisotropy was accomplished without redepositions or etch residues when conducted under high sputtering conditions.

更新日期：2015-09-01

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