Large‐Scale and Robust Multifunctional Vertically Aligned MoS2 Photo‐Memristors,Advanced Functional Materials

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Large‐Scale and Robust Multifunctional Vertically Aligned MoS2 Photo‐Memristors
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2020-09-18 , DOI: 10.1002/adfm.202005718
Kamalakannan Ranganathan ₁ , Mor Fiegenbaum‐Raz ₁ , Ariel Ismach ₁

Affiliation

Memristive devices have drawn considerable research attention due to their potential applications in non‐volatile memory and neuromorphic computing. The combination of resistive switching devices with light‐responsive materials is considered a novel way to integrate optical information with electrical circuitry. On the other hand, 2D materials have attracted substantial consideration, thanks to their unique crystal structure, as reflected in their chemical and physical properties. Although not the major focus, van der Waals solids are proven to be potential candidates in memristive devices. In this scheme, the majority of the resistive switching devices are implemented on planar flakes, obtained by mechanical exfoliation. Here a facile and robust methodology is utilized to grow large‐scale vertically aligned MoS₂ (VA‐MoS₂) films on standard silicon substrates. Memristive devices with the structure silver/VA‐MoS₂/Si are shown to have low set‐ON voltages (<0.5 V), large‐retention times (>2 × 10⁴ s), and high thermal stability (up to 350 °C). The proposed memristive device also exhibits long term potentiation/depression (LTP/LTD) and photo‐active memory states. The large‐scale fabrication, together with the low operating voltages, high thermal stability, light‐responsive behavior, and LTP/LTD, make this approach very appealing for real‐life non‐volatile memory applications.

中文翻译：

大型，功能强大的多功能垂直排列MoS2光电晶体管

忆阻器件由于其在非易失性存储器和神经形态计算中的潜在应用而吸引了相当多的研究关注。电阻开关设备与光响应材料的组合被认为是将光学信息与电路集成的一种新颖方法。另一方面，由于其独特的晶体结构，二维材料已经引起了实质性的考虑，反映在其化学和物理特性中。尽管不是主要重点，但范德华固体已被证明是忆阻器件的潜在候选者。在该方案中，大多数电阻式开关器件都在通过机械剥落获得的平面薄片上实现。在这里，一种简便而强大的方法被用于生长大规模垂直排列的MoS ₂在标准硅基板上的（VA-MoS ₂）薄膜。具有银/ VA-MoS ₂ / Si结构的忆阻器件显示具有较低的开启电压（<0.5 V），较大的保持时间（> 2×10 ⁴ s）和较高的热稳定性（高达350° C）。拟议的忆阻器件还具有长期增强/抑制（LTP / LTD）和光敏记忆状态。大规模制造，以及低工作电压，高热稳定性，光响应性能和LTP / LTD，使得这种方法对于现实生活中的非易失性存储应用非常有吸引力。

更新日期：2020-09-18

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