衬底诱导的外延石墨烯和SiO2上化学气相沉积法生长的MoS2的形态和结构特性的变化。,ACS Applied Materials & Interfaces

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衬底诱导的外延石墨烯和SiO2上化学气相沉积法生长的MoS2的形态和结构特性的变化。
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2020-09-15 , DOI: 10.1021/acsami.0c06173
Jakub Sitek ₁ , Janusz Plocharski ₂ , Iwona Pasternak ₁ , Arkadiusz P Gertych ₁ , Clifford McAleese ₃ , Ben R Conran ₃ , Mariusz Zdrojek ₁ , Wlodek Strupinski ₁

Affiliation

在这项工作中，我们报告了衬底类型对通过化学气相沉积（CVD）生长的二硫化钼（MoS ₂）的形态和结构特性的影响。响应于热力学条件的变化，在三维（3D）衬底（即SiO ₂）上合成的MoS ₂产生了不同的晶粒形貌，包括三角形，截头三角形和圆形。同时，石墨烯上的MoS ₂对生长条件的改变具有高度的免疫力，仅形成三角形晶体。我们解释了MoS ₂在SiO ₂上的区别石墨烯和石墨烯的表面扩散机制不同，分别是跳跃和类似气体分子碰撞的机制。结果，我们观察到在石墨烯上形成了热力学上有利的核形，而在SiO _2上，可以实现全谱域形。此外，石墨烯可以很好地承受生长过程，应变和掺杂仅发生很小的变化。此外，通过将石墨烯用作生长基质，我们可以实现范德华外延并实现无应变生长，这是光致发光（PL）研究表明的。我们指出，与拉曼光谱相反，PL使我们能够任意确定MoS _2中的应变水平。

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Substrate-induced variances in morphological and structural properties of MoS2 grown by chemical vapor deposition on epitaxial graphene and SiO2.

In this work, we report the impact of substrate type on the morphological and structural properties of molybdenum disulfide (MoS₂) grown by chemical vapor deposition (CVD). MoS₂ synthesized on a three-dimensional (3D) substrate, that is, SiO₂, in response to the change of the thermodynamic conditions yielded different grain morphologies, including triangles, truncated triangles, and circles. Simultaneously, MoS₂ on graphene is highly immune to the modifications of the growth conditions, forming triangular crystals only. We explain the differences between MoS₂ on SiO₂ and graphene by the different surface diffusion mechanisms, namely, hopping and gas-molecule-collision-like mechanisms, respectively. As a result, we observe the formation of thermodynamically favorable nuclei shapes on graphene, while on SiO₂, a full spectrum of domain shapes can be achieved. Additionally, graphene withstands the growth process well, with only slight changes in strain and doping. Furthermore, by the application of graphene as a growth substrate, we realize van der Waals epitaxy and achieve strain-free growth, as suggested by the photoluminescence (PL) studies. We indicate that PL, contrary to Raman spectroscopy, enables us to arbitrarily determine the strain levels in MoS₂.

更新日期：2020-10-07

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