氮成分对反应溅射TaN薄膜电阻率的影响,Surface and Interface Analysis

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氮成分对反应溅射TaN薄膜电阻率的影响
Surface and Interface Analysis ( IF 1.6 ) Pub Date : 2014-11-18 , DOI: 10.1002/sia.5691
Nishat Arshi ₁ , Junqing Lu ₂ , Yun Kon Joo ₁ , Jae Hong Yoon ₁ , Bon Heun Koo ₁

Affiliation

纳米晶氮化钽 (TaN) 薄膜已通过反应性直流磁控溅射技术沉积在 Si/SiO2 (100) 衬底上，氮气流速范围为 0、3、5、7、9 至 11 标准立方厘米每分钟 (sccm ）。通过 X 射线衍射 (XRD)、场发射扫描电子显微镜、X 射线光电子能谱 (XPS) 和四点探针测量分别研究了 TaN 薄膜的结构特性、表面形貌、化学成分和电阻率。在 XRD 谱中，随着氮气流量的增加，观察到按 Ta-Ta2N-TaN-Ta4N5 顺序的经典氮化钽相形成顺序和金属 Ta 量的减少。发现由于间隙 N 原子的电子散射增加，TaN 膜的电阻率随着 N/Ta 比的增加而增加。在 XPS 分析中，在 TaN 薄膜的核心能级光谱中观察到两组与不同 TaN 相相关的 Ta4f 双峰。在 Ta4f 双峰与 Ta4p 和 N1s 基团之间没有观察到强耦合。适当的氮气流被认为有助于化学计量的 TaN 的结合和形成。版权所有 © 2014 John Wiley & Sons, Ltd. 适当的氮气流被认为有助于化学计量的 TaN 的结合和形成。版权所有 © 2014 John Wiley & Sons, Ltd. 适当的氮气流被认为有助于化学计量的 TaN 的结合和形成。版权所有 © 2014 John Wiley & Sons, Ltd.

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Effects of nitrogen composition on the resistivity of reactively sputtered TaN thin films

Nanocrystalline tantalum nitride (TaN) thin films have been deposited by reactive direct current magnetron sputtering technique on Si/SiO2 (100) substrate with nitrogen flow rate ranging from 0, 3, 5, 7, 9 to 11 standard cubic centimeter per minute (sccm). Structural properties, surface morphology, chemical composition and and resistivity of the TaN films were investigated by X-ray diffraction (XRD), field emission scanning electron microscopy, X-ray photoemission spectroscopy (XPS) and four-point probe measurements, respectively. In the XRD spectra, a classical formation sequence of tantalum nitride phases in the order of Ta-Ta2N-TaN-Ta4N5 and decreasing amount of metallic Ta were observed with increasing nitrogen flow. The electrical resistivity of the TaN film was found to increase with increasing N/Ta ratio as a result of the increased electron scattering from interstitial N atoms. In the XPS analysis, two groups of Ta4f doublets relating to different TaN phases were observed in the core level spectra of TaN films. No strong coupling was observed between the Ta4f doublets and the Ta4p and the N1s groups. The appropriate nitrogen flow was believed to be helpful in the bonding and formation of stoichiometric TaN. Copyright © 2014 John Wiley & Sons, Ltd.

更新日期：2014-11-18

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