Ferroelectric Polarization Switching of Hafnium Zirconium Oxide in a Ferroelectric/Dielectric Stack,ACS Applied Energy Materials

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Ferroelectric Polarization Switching of Hafnium Zirconium Oxide in a Ferroelectric/Dielectric Stack
ACS Applied Energy Materials ( IF 5.4 ) Pub Date : 2019-05-08 00:00:00 , DOI: 10.1021/acsaelm.9b00092
Mengwei Si ₁ , Xiao Lyu ₁ , Peide D. Ye ₁

Affiliation

The ferroelectric polarization switching in ferroelectric hafnium zirconium oxide (Hf_0.5Zr_0.5O₂, HZO) in the HZO/Al₂O₃ ferroelectric/dielectric stack is investigated systematically by capacitance–voltage and polarization–voltage measurements. The thickness of dielectric layer is found to have a determinant impact on the ferroelectric polarization switching of ferroelectric HZO. A suppression of ferroelectricity is observed with a thick dielectric layer. In the gate stacks with thin dielectric layers, a full polarization switching of the ferroelectric layer is found possible by the proposed leakage-current-assist mechanism through the ultrathin dielectric layer. Theoretical simulation results agree well with experimental data. This work clarifies some of the critical parts of the long-standing confusions and debate related to negative capacitance field-effect transistors (NC-FETs) concepts and experiments.

中文翻译：

铁电/电介质堆中of氧化锆的铁电极化转换

HZO / Al ₂ O ₃中的铁电氧化锆锆（Hf _0.5 Zr _0.5 O ₂，HZO）中的铁电极化转换通过电容-电压和极化-电压测量系统地研究了铁电/电介质堆叠。发现介电层的厚度对铁电HZO的铁电极化切换具有决定性的影响。用厚的介电层观察到铁电的抑制。在具有薄介电层的栅极叠层中，通过提出的穿过超薄介电层的漏电流辅助机制，可以发现铁电层的完全极化转换。理论仿真结果与实验数据吻合良好。这项工作澄清了与负电容场效应晶体管（NC-FET）概念和实验有关的长期困惑和争论的一些关键部分。

更新日期：2019-05-08

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