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Electronic Transport Evidence for Topological Nodal-Line Semimetals of ZrGeSe Single Crystals
ACS Applied Energy Materials ( IF 5.4 ) Pub Date : 2019-05-13 00:00:00 , DOI: 10.1021/acsaelm.9b00061 Lei Guo 1, 2 , Ting-Wei Chen 3 , Chen Chen 1 , Lei Chen 2, 4 , Yang Zhang 1 , Guan-Yin Gao 5 , Jie Yang 6 , Xiao-Guang Li 5 , Wei-Yao Zhao 2, 4 , Shuai Dong 1 , Ren-Kui Zheng 2, 3
ACS Applied Energy Materials ( IF 5.4 ) Pub Date : 2019-05-13 00:00:00 , DOI: 10.1021/acsaelm.9b00061 Lei Guo 1, 2 , Ting-Wei Chen 3 , Chen Chen 1 , Lei Chen 2, 4 , Yang Zhang 1 , Guan-Yin Gao 5 , Jie Yang 6 , Xiao-Guang Li 5 , Wei-Yao Zhao 2, 4 , Shuai Dong 1 , Ren-Kui Zheng 2, 3
Affiliation
Although the band topology of ZrGeSe has been studied via the magnetic torque technique, the electronic transport behaviors related to the relativistic fermions in ZrGeSe are still unknown. Here, we first report systematic electronic transport properties of high-quality ZrGeSe single crystals under magnetic fields up to 14 T. Resistivity plateaus of temperature-dependent resistivity curves in both the presence and absence of magnetic fields as well as large, nonsaturating magnetoresistance in the low-temperature region were observed. By analyzing the temperature- and angular-dependent Shubnikov–de Haas oscillations and fitting it via the Lifshitz–Kosevich (LK) formula with the Berry phase being taken into account, we proved that Dirac fermions dominate the electronic transport behaviors of ZrGeSe and the presence of the nontrivial Berry phase. First-principles calculations demonstrate that ZrGeSe possesses Dirac bands and normal bands near Fermi surface, resulting in the observed magnetotransport phenomena. These results demonstrate that ZrGeSe is a topological nodal-line semimetal, which provides a fundamentally important platform to study the quantum physics of topological semimetals.
中文翻译:
ZrGeSe单晶拓扑结线半金属的电子传输证据
尽管已经通过磁转矩技术研究了ZrGeSe的能带拓扑,但是与ZrGeSe中相对论性费米子有关的电子输运行为仍是未知的。在这里,我们首先报道高品质ZrGeSe单晶在高达14 T的磁场下的系统电子输运特性。在存在和不存在磁场以及大,非饱和磁阻的情况下,温度相关的电阻率曲线的电阻率平稳期观察到低温区域。通过分析与温度和角度相关的Shubnikov-de Haas振荡并通过考虑贝里相的Lifshitz-Kosevich(LK)公式进行拟合,我们证明了狄拉克费米子在ZrGeSe的电子输运行为和存在中起主导作用不平凡的浆果阶段。第一性原理计算表明,ZrGeSe在费米表面附近具有狄拉克带和法线带,从而导致观察到的磁传输现象。这些结果表明,ZrGeSe是一种拓扑结线半金属,它为研究拓扑半金属的量子物理学提供了根本重要的平台。
更新日期:2019-05-13
中文翻译:
ZrGeSe单晶拓扑结线半金属的电子传输证据
尽管已经通过磁转矩技术研究了ZrGeSe的能带拓扑,但是与ZrGeSe中相对论性费米子有关的电子输运行为仍是未知的。在这里,我们首先报道高品质ZrGeSe单晶在高达14 T的磁场下的系统电子输运特性。在存在和不存在磁场以及大,非饱和磁阻的情况下,温度相关的电阻率曲线的电阻率平稳期观察到低温区域。通过分析与温度和角度相关的Shubnikov-de Haas振荡并通过考虑贝里相的Lifshitz-Kosevich(LK)公式进行拟合,我们证明了狄拉克费米子在ZrGeSe的电子输运行为和存在中起主导作用不平凡的浆果阶段。第一性原理计算表明,ZrGeSe在费米表面附近具有狄拉克带和法线带,从而导致观察到的磁传输现象。这些结果表明,ZrGeSe是一种拓扑结线半金属,它为研究拓扑半金属的量子物理学提供了根本重要的平台。