Mechanism and Optimization of a Graphene/Silicon Hybrid Diode Terahertz Modulator,ACS Applied Energy Materials

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Mechanism and Optimization of a Graphene/Silicon Hybrid Diode Terahertz Modulator
ACS Applied Energy Materials ( IF 5.4 ) Pub Date : 2020-06-03 00:00:00 , DOI: 10.1021/acsaelm.0c00250
Yuanpeng Li ₁ , Dainan Zhang ₁ , Ruitao Jia ₁ , Xuesong Li ₁ , Yulong Liao ₁ , Qi-Ye Wen ₁ , Zhiyong Zhong ₁ , Tianlong Wen ₁

Affiliation

Graphene/silicon hybrid diodes have been proven efficient for broad-band terahertz (THz) modulation with electrical and optical stimuli. However, the optimal protocol to apply optical and electrical stimuli has not been well-determined to obtain the best performance. Here, band theory of the hybrid diode has been used to analyze the underlying modulation mechanism and to help determine the optimal modulation protocol. Monolayer gold nanoparticles (AuNPs) were coated on the graphene/silicon hybrid diode to enhance the modulation performance. Both high modulation depth (∼93%) and modulation rate (∼4.6 kHz) were obtained with the AuNP-coated hybrid diode using the proper modulation method. To explore the underlying mechanism for a graphene/silicon hybrid diode THz modulator, this work could throw light on other material systems for THz modulation.

中文翻译：

石墨烯/硅混合二极管太赫兹调制器的机理和优化

石墨烯/硅混合二极管已被证明可有效用于带电和光刺激的宽带太赫兹（THz）调制。但是，尚未充分确定应用光学和电刺激的最佳方案以获得最佳性能。在这里，混合二极管的能带理论已被用于分析潜在的调制机制并帮助确定最佳调制协议。将单层金纳米颗粒（AuNPs）涂覆在石墨烯/硅杂化二极管上以增强调制性能。使用适当的调制方法，使用AuNP涂层的混合二极管可获得高调制深度（〜93％）和调制速率（〜4.6 kHz）。为了探索石墨烯/硅混合二极管太赫兹调制器的基本机制，这项工作可以将光投射到其他材料系统上进行太赫兹调制。

更新日期：2020-06-03

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