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All-Oxide NiO/Ga2O3 p–n Junction for Self-Powered UV Photodetector
ACS Applied Energy Materials ( IF 5.4 ) Pub Date : 2020-06-10 00:00:00 , DOI: 10.1021/acsaelm.0c00301 Yachao Wang 1 , Chao Wu 1 , Daoyou Guo 1, 2 , Peigang Li 3 , Shunli Wang 1 , Aiping Liu 1 , Chaorong Li 1 , Fengmin Wu 1 , Weihua Tang 3
ACS Applied Energy Materials ( IF 5.4 ) Pub Date : 2020-06-10 00:00:00 , DOI: 10.1021/acsaelm.0c00301 Yachao Wang 1 , Chao Wu 1 , Daoyou Guo 1, 2 , Peigang Li 3 , Shunli Wang 1 , Aiping Liu 1 , Chaorong Li 1 , Fengmin Wu 1 , Weihua Tang 3
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Recently, Ga2O3-based self-powered ultraviolet photodetectors have aroused great interest due to their potential applications in civil, medical, and environmental monitoring fields. So far, most p–n junction photodetectors are fabricated with p-type semiconductors like GaN and SiC, which are usually nonoxide materials. As a result, the p-type semiconductors are oxidized and the conductive properties degenerated when constructing a p–n junction with the Ga2O3 thin film at a high growth temperature. In this work, we chose the oxide NiO as the p-type material and used radio-frequency reactive magnetron sputtering system to fabricate the all-oxide NiO/Ga2O3 p–n junction at room temperature and manufacture the self-powered UV photodetector. Thanks to the type II band alignment, the photodetector exhibits a responsivity (R) of 57 μA/W, a detectivity (D*) of 5.45 × 109 jones, and an Ilight/Idark ratio of 122 when exposed to a 254 nm light irradiation at 0 V. In addition, the photodetector based on the all-oxide NiO/Ga2O3 p–n junction shows good stability and reproducibility in air, oxygen, and vacuum. Our results provide an inexpensive and suitable pathway for the mass production of self-powered UV photodetectors.
中文翻译：
用于自供电紫外光电探测器的全氧化物NiO / Ga 2 O 3 p–n结
近来，基于Ga 2 O 3的自供电式紫外光电探测器由于在民用，医疗和环境监测领域中的潜在应用而引起了人们的极大兴趣。到目前为止，大多数p–n结光电探测器都是由GaN和SiC等p型半导体制成的，它们通常是非氧化物材料。结果，在高生长温度下与Ga 2 O 3薄膜建立ap-n结时，p型半导体被氧化，导电性能退化。在这项工作中，我们选择氧化物NiO作为p型材料，并使用射频反应磁控溅射系统来制造全氧化物NiO / Ga 2 O 3。在室温下p–n结，并制造自供电的紫外线光电探测器。由于II型谱带对准，当暴露于254时，该光电探测器的响应度（R）为57μA/ W，灵敏度（D *）为5.45×10 9琼斯，I亮/ I暗比为122。在0 V下进行nm辐射。此外，基于全氧化物NiO / Ga 2 O 3 p–n结的光电探测器在空气，氧气和真空中显示出良好的稳定性和可重复性。我们的结果为大规模生产自供电的紫外线光电探测器提供了一种廉价且合适的途径。
更新日期：2020-06-10
中文翻译：
用于自供电紫外光电探测器的全氧化物NiO / Ga 2 O 3 p–n结
近来，基于Ga 2 O 3的自供电式紫外光电探测器由于在民用，医疗和环境监测领域中的潜在应用而引起了人们的极大兴趣。到目前为止，大多数p–n结光电探测器都是由GaN和SiC等p型半导体制成的，它们通常是非氧化物材料。结果，在高生长温度下与Ga 2 O 3薄膜建立ap-n结时，p型半导体被氧化，导电性能退化。在这项工作中，我们选择氧化物NiO作为p型材料，并使用射频反应磁控溅射系统来制造全氧化物NiO / Ga 2 O 3。在室温下p–n结，并制造自供电的紫外线光电探测器。由于II型谱带对准，当暴露于254时，该光电探测器的响应度（R）为57μA/ W，灵敏度（D *）为5.45×10 9琼斯，I亮/ I暗比为122。在0 V下进行nm辐射。此外，基于全氧化物NiO / Ga 2 O 3 p–n结的光电探测器在空气，氧气和真空中显示出良好的稳定性和可重复性。我们的结果为大规模生产自供电的紫外线光电探测器提供了一种廉价且合适的途径。
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